High-frequency organic rectifiers through interface engineering
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High-frequency organic rectifiers through interface engineering Chan-mo Kang, IoT Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea Hyeonwoo Shin, and Changhee Lee, Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, 08826, Korea Address all correspondence to C. Lee at [email protected] (Received 12 June 2017; accepted 8 September 2017)
Abstract The demand for high-frequency (HF) and low-cost rectifiers has encouraged many researchers to investigate organic rectifiers. Recently, organic rectifiers with enhanced intrinsic carrier mobility and charge injection efficiency have enabled operating frequencies to reach up to a gigahertz (GHz). The metal/organic and organic/organic interfaces have played a significant role in determining the electrical properties of the organic rectifiers. In this prospective article, we review the structure of organic rectifiers and present the current state-of-the-art to attain their HF performance. We discuss methods for improving their electrical properties using interface engineering and present future prospects for practical use of GHz-operable organic rectifiers.
Introduction During the last decade, organic semiconductors have gained considerable attention as an active layer for next-generation electronics due to ease in their patterning and their tunable molecular structure, flexibility, light-weight, and large-area applicability.[1–4] In particular, their promising potential lowcost is expected to begin an era of disposable electronics.[5,6] Organic radio-frequency identification (RFID) tags, which can be used to detect objects automatically in the near-field region (13.56
[15]
2008
SCH-S
Au/pentacene/Al
3000
2.88@3
>13.56
[16]
2009
SCH-S
Au/pentacene/Al
–
–
>13.56
[11]
2010
SCH-S
Cu/CuTCNQ/pentacene/Al
2 × 106
0.51@5
>13.56
[17]
2010
SCH-S
Au/MoO3/pentacene/Al
1000
1@3
>25
[18]
4
2011
SCH-S
Al/WO3/HMDS/C60/BCP/Al
4.6 × 10
46.5@1
700
[13]
2011
SCH-S
Al/pentacene/MoO3/Au
1000
0.2@3
10
[19]
2012
SCH-S
Al/pentacene/Au
3 × 104
0.1@5
1
[20]
5
100@10
5
[21]
2012
SCH-S
Al/pentacene/Au
2 × 10
2013
SCH-S
Al/CuPc/Au
8.3 × 106
2.5@5
20
[22]
5
2.9@3
>100
[23]
7
2014
SCH-S
Au/MoO3/pentacene/Al
5.7 × 10
2016
SCH-S
Au/PFBT/pentacene/Al
1.1 × 10
100@3
1240
[12]
2009
SCH-P
Ag/P3HT/Al
2900
0.1@5
1.8
[24]
0.002@5
3
[25]
2009
SCH-P
Cu/PTAA/Ag
4
3.3 × 10 4
2009
SCH-P
Au/PEDOT:PSS/P3HT/Al
3 × 10
0.1@3
>2
[26]
2010
SCH-P
Ni/Au/P3HT/Al
393
12.54@5
1
[27]
4
2011
SCH-P
InZnO/PEDOT:PSS/PQT-12/Al
2 × 10
6@5
>14
[28]
2013
SCH-P
Cu/PTAA/Ag
–
–
13.56
[29]
2014
SCH-P
Cu/PTAA/Ag
–
–
20
[30]
2014
SCH-P
ITO/PEDOT:PSS/TFB/Al
–
0.2@4
>50
[31]
2014
SCH-P
Al/AlOx/FS102/PEDOT:PSS/Au
104
100@3
0.02
[32]
2014
SCH-P
Cu/PTAA/Ag
100
0.02@4
13.56
[33]
2015
SCH-P
Cu/PTAA/Ag
100
0.04@5
30
[34]
2016
SCH-L
Au/C60:polystyrene/Al
2000
2 × 10−
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