High-frequency organic rectifiers through interface engineering

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High-frequency organic rectifiers through interface engineering Chan-mo Kang, IoT Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea Hyeonwoo Shin, and Changhee Lee, Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, 08826, Korea Address all correspondence to C. Lee at [email protected] (Received 12 June 2017; accepted 8 September 2017)

Abstract The demand for high-frequency (HF) and low-cost rectifiers has encouraged many researchers to investigate organic rectifiers. Recently, organic rectifiers with enhanced intrinsic carrier mobility and charge injection efficiency have enabled operating frequencies to reach up to a gigahertz (GHz). The metal/organic and organic/organic interfaces have played a significant role in determining the electrical properties of the organic rectifiers. In this prospective article, we review the structure of organic rectifiers and present the current state-of-the-art to attain their HF performance. We discuss methods for improving their electrical properties using interface engineering and present future prospects for practical use of GHz-operable organic rectifiers.

Introduction During the last decade, organic semiconductors have gained considerable attention as an active layer for next-generation electronics due to ease in their patterning and their tunable molecular structure, flexibility, light-weight, and large-area applicability.[1–4] In particular, their promising potential lowcost is expected to begin an era of disposable electronics.[5,6] Organic radio-frequency identification (RFID) tags, which can be used to detect objects automatically in the near-field region (13.56

[15]

2008

SCH-S

Au/pentacene/Al

3000

2.88@3

>13.56

[16]

2009

SCH-S

Au/pentacene/Al





>13.56

[11]

2010

SCH-S

Cu/CuTCNQ/pentacene/Al

2 × 106

0.51@5

>13.56

[17]

2010

SCH-S

Au/MoO3/pentacene/Al

1000

1@3

>25

[18]

4

2011

SCH-S

Al/WO3/HMDS/C60/BCP/Al

4.6 × 10

46.5@1

700

[13]

2011

SCH-S

Al/pentacene/MoO3/Au

1000

0.2@3

10

[19]

2012

SCH-S

Al/pentacene/Au

3 × 104

0.1@5

1

[20]

5

100@10

5

[21]

2012

SCH-S

Al/pentacene/Au

2 × 10

2013

SCH-S

Al/CuPc/Au

8.3 × 106

2.5@5

20

[22]

5

2.9@3

>100

[23]

7

2014

SCH-S

Au/MoO3/pentacene/Al

5.7 × 10

2016

SCH-S

Au/PFBT/pentacene/Al

1.1 × 10

100@3

1240

[12]

2009

SCH-P

Ag/P3HT/Al

2900

0.1@5

1.8

[24]

0.002@5

3

[25]

2009

SCH-P

Cu/PTAA/Ag

4

3.3 × 10 4

2009

SCH-P

Au/PEDOT:PSS/P3HT/Al

3 × 10

0.1@3

>2

[26]

2010

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Ni/Au/P3HT/Al

393

12.54@5

1

[27]

4

2011

SCH-P

InZnO/PEDOT:PSS/PQT-12/Al

2 × 10

6@5

>14

[28]

2013

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Cu/PTAA/Ag





13.56

[29]

2014

SCH-P

Cu/PTAA/Ag





20

[30]

2014

SCH-P

ITO/PEDOT:PSS/TFB/Al



0.2@4

>50

[31]

2014

SCH-P

Al/AlOx/FS102/PEDOT:PSS/Au

104

100@3

0.02

[32]

2014

SCH-P

Cu/PTAA/Ag

100

0.02@4

13.56

[33]

2015

SCH-P

Cu/PTAA/Ag

100

0.04@5

30

[34]

2016

SCH-L

Au/C60:polystyrene/Al

2000

2 × 10−