High-mobility patternable MoS 2 percolating nanofilms
- PDF / 2,571,104 Bytes
- 9 Pages / 612 x 808 pts Page_size
- 110 Downloads / 201 Views
High-mobility patternable MoS2 percolating nanofilms Xiangxiang Gao1, Jun Yin1, Gang Bian1, Hai-Yang Liu1, Chao-Peng Wang1, Xi-Xi Pang1, and Jian Zhu1,2 () 1 2
School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin 300350, China Tianjin Key Laboratory of Metal and Molecule-Based Material Chemistry, Tianjin Key Laboratory for Rare Earth Materials and Applications, Nankai University, Tianjin 300350, China
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020 Received: 13 September 2020 / Revised: 28 October 2020 / Accepted: 28 October 2020
ABSTRACT Fabrication of large-area and uniform semiconducting thin films of two-dimensional (2D) materials is paramount for the full exploitation of their atomic thicknesses and smooth surfaces in integrated circuits. In addition to elaborate vapor-based synthesis techniques for the wafer-scale growth of 2D films, solution-based approaches for high-quality thin films from the liquid dispersions of 2D flakes, despite underdeveloped, are alternative cost-effective tactics. Here, we present layer-by-layer (LbL) assembly as an effective approach to obtaining scalable semiconducting films of molybdenum disulfide (MoS2) for field-effect transistors (FETs). LbL assembly is achieved by coordinating electrochemically exfoliated MoS2 with cationic poly (diallyldimethylammonium chloride) (PDDA) through electrostatic interactions. The PDDA/MoS2 percolating nanofilms show controlled and self-limited growth on a variety of substrates, and are easily patterned through lift-off processes. Ion gel gated FETs are fabricated on these MoS2 nanofilms, and they show mobilities of 9.8 cm2·V−1·s−1, on/off ratios of 2.1 105 with operating voltages less than 2 V. The annealing temperature in the fabrication process can be as low as 200 °C, thereby permitting the fabrication of flexible FETs on polyethylene terephthalate substrates. The LbL assembly technique holds great promise for the large-scale fabrication of flexible electronics based on solution-processed 2D semiconductors.
KEYWORDS layer-by-layer assembly, molybdenum disulfide, nanofilms, solution-processed electronics, field-effect transistors
1
Introduction
Two-dimensional (2D) materials from layered semiconductors, such as transition metal dichalcogenides (TMDs) or black phosphorous, have stimulated tremendous research interest in electronics and optoelectronics [1–9]. Arising from their atomic thicknesses and dangling bonds-free surfaces, they have exhibited mechanical flexibility with unique electrical, optical, and magnetic properties, and formed versatile heterojunctions with other materials through simple stacking [10, 11]. Despite substantial progress in this emerging area, one roadblock fundamentally hindering 2D materials from the practical involvement in electronics industry is the availability of their wafer-scale thin films. Chemical vapor deposition (CVD) is an effective approach to synthesizing high quality monolayer TMDs, however
Data Loading...
