High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas
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P. Musumeci and M. Zimbone Dipartimento di Fisica, Università di Catania, V. S. Sofia 64, 95123 Catania, Italy
L. Torrisi Physics Department, Messina, V.le F. Stagno D’Alcontres 31, 98166 S. Agata (ME), Italy
F. La Viaa) Istituto Microelettronica Microsistemi-CNR, Stradale Primosole, Catania, Italy
D. Margarone and A. Velyhan ELI Beamlines Project, Institute of Physics of the ASCR, Na Slovance 2, 18221, Prague, Czech Republic
J. Ullschmied Institute of Plasma Physics, AS CR, v.v.i., Za Slovankou 3, Prague 8, Czech Republic
L. Calcagnob) Dipartimento di Fisica, Università di Catania, V. S. Sofia 64, 95123 Catania, Italy (Received 10 April 2012; accepted 22 May 2012)
Silicon carbide (SiC) detectors were used to analyze the multi-MeV ions of the plasma produced by irradiation of various targets with a 300-ps laser at intensity of 1016 W/cm2. The SiC detectors were realized by fabricating Schottky diodes on 80 lm epitaxial layer. The low dopant concentration and defect density of the epilayer allowed the realization of good performance detectors. The use of SiC detectors ensures the cutting of the visible and soft ultraviolet radiation emitted from plasma enhancing the sensitivity to very fast ions. The time-of-flight spectra obtained by irradiating different targets show a peak associated to protons and various peaks relative to different charge states of ions. Processing of the experimental data allows to estimate the energies of the protons and of the different ions emitted from laser-induced plasma. The SiC detector results are compared with the ones obtained by Ion Collector and a Thomson Parabola spectrometer.
I. INTRODUCTION
In the recent years, there was a growing interest for electronic devices operating in very harsh environments, at elevated temperatures, high power, high frequency, and high radiation fields.1,2 In that context, silicon carbide (SiC) is one of the most promising wide band gap materials for these devices due to its high breakdown electric field, high electron saturation velocity, high operating temperature, and high radiation hardness properties. Over the last few years, considerable effort has been concentrated on better understanding the performance of SiC-based radiation detectors to be used in high temperatures and high
a)
This author was an editor of this focus issue during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs. org/jmr-editor-manuscripts/ b) Address all correspondence to this author. e-mail: [email protected] DOI: 10.1557/jmr.2012.211 J. Mater. Res., Vol. 28, No. 1, Jan 14, 2013
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radiation conditions under which conventional semiconductors detectors cannot be adequately used.3 SiC detectors were used with good results for neutrons,4 for x-rays,5 and for charged particles emitted by alpha sources up to 5.48 MeV.6 In particular, the possibility to use x-ray SiC detectors operating at room or high temperature is of large
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