Novel Preparation Method of Thin Films by Ablation Plasma produced by Intense Pulsed Ion Beam Evaporation
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Novel Preparation Method of Thin Films by Ablation Plasma produced by Intense Pulsed Ion Beam Evaporation Kiyoshi Yatsui, Hisayuki Suematsu, Weihua Jiang, Tsuneo Suzuki, Sung-Chae Yang, Yoshiaki Kinemuchi, Makoto Hirai and Keizo Kato* Extreme-Energy Density Institute, Nagaoka Univ. of Technology, Nagaoka, Niigata 940-2188, JAPAN *Graduate School of Science and Technology, Niigata University, Niigata 950-2181, JAPAN ABSTRACT A novel preparation method of thin films has been successfully developed by high-density ablation plasma produced by pulsed ion-beam evaporation method. The preparation is available with extremely high deposition rate (with cm/s), without heating the substrate, in a vacuum, with good stoichiometry. As an example, the preparation of phosphoresecent Furthermore, a new method has been developed of SrAl2O4:Eu,Dy thin films will be shown. the synthesis of ultrafine nanosize powders by use of microexplosion of pulsed wire discharge. As an example, the synthesis of NiFe2O4 powders will be shown, where two wires of nickel and iron were exploded by pulsed current. In addition, we have succeeded in the preparation of tungsten thin films within via holes in LSI by use of pulsed ion beam-evaporation method. In addition to the huge power per shot, a new machine has been developed of highly repetitive, pulsed power machine for the industrial applications.
INTRODUCTION When an intense pulsed ion beam is irradiated on solid target, high-density ablation plasma is produced due to short range in the target. It has been proposed and demonstrated by one of the present authors that thin films are efficiently produced by the deposition of the high-density plasma on the substrate placed nearby, which was named pulsed ion-beam evaporation (IBE). After the preparation of ZnS films in 1988 [1,2], we have succeeded in the preparation of various materials such as superconductive (YBaCuO), dielectric ((Ba,Sr)TiO3), transparent conductive (ITO), hard (B4C), and poly silicon, which was available in situ, with extremely high deposition rate, without heating the substrate, in a vacuum, with good stoichiometrey, and with good morphology [3-5]. The features of IBE are summarized as follows [1-5]. 1) Using high-density ablation plasma, the instantaneous deposition rate is extremely high. 2) The pulse width is sufficiently short compared to the thermal conduction time, the preparation is adiabatic, hence the process is basically low-temperature process. Thus, we do not need to heat the substrate during the deposition. 3) Due to short time for the preparation, there is no enough time for the plasma to interact with impurities. Hence, the contamination problem, which is one of serious problems for normal preparation methods, can be avoided, and thus the composition is almost same between the films and the target, keeping good stoichiometry. P4.9.1
4) The preparation is available in a vacuum. Since some of these results were published elsewhere, some new results on the phosphorescent thin films of SrAl2O4 will be presented in this p
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