High photoresponsivity and light-induced carrier conversion in RGO/TSCuPc hybrid phototransistors
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ARTICLE High photoresponsivity and light-induced carrier conversion in RGO/ TSCuPc hybrid phototransistors Tanusri Pala),c),d) Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA
Daeha Joungc) Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA; and Department of Physics, University of Central Florida, Orlando, Florida 32826, USA
Surajit Ghoshe) Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA
Anindarupa Chunder and Lei Zhai Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA; and Department of Chemistry, University of Central Florida, Orlando, Florida 32826, USA
Saiful I. Khondakerb) Nanoscience Technology Center, University of Central Florida, Orlando, Florida 32826, USA; and Department of Physics, University of Central Florida, Orlando, Florida 32826, USA (Received 4 July 2018; accepted 10 September 2018)
Reduced graphene oxide (RGO) and its composites have a great potential for their applications in optoelectronic devices. In particular, small molecules can be used for tailoring optoelectronic properties of RGO. Here, we report the fabrication of a hybrid RGO/tetrasulfonate salt of the copper phthalocyanine (RGO/TSCuPc) nanocomposite phototransistor. The device shows p-type transistor behavior in the dark which changes to ambipolar behavior at the lower light intensity, and then shows a complete n-type property at the higher light intensity. The photoresponsivity of the device can be tuned by gate voltages, and the best photoresponsivity is recorded to be as high as ;4.6 A/W for positive gate voltage and ;6.3 A/W with a negative sign for negative gate voltage under solar light irradiation. The observations suggest that the photogenerated free electrons of TSCuPc molecules can be injected efficiently onto RGO sheets, resulting in increases in electron conduction and hole quenching.
I. INTRODUCTION
Solution processable reduced graphene oxide (RGO) is of great interest due to their tunable electronic and optoelectronic properties as well as their potential in energy applications.1–14 In addition, RGO can be synthesized in large quantities at low cost.1–3,6,7 Their easy solution processability makes them ideal candidates for large area device applications. Moreover, due to the presence of defects and oxygen functional groups in RGO, it can be an ideal template for the decoration of different types of organic and inorganic nanomaterials which allow one to obtain a new class of multifunctional materials,1,2,15–27 resulting further tunability of device Address all correspondence to these authors. a) e-mail: [email protected] b) e-mail: [email protected] c) These authors contributed equally to this work. d) Present address: Department of Physics, Midnapore College, Midnapore 721101, India. e) Present address: Department of Physics and Technophysics, Vidyasagar University, Midnapore 721102, India. DOI: 10.1557/jmr.2018.370 J. Mater. Res., Vol. 33, No. 23, Dec 1
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