High-Quality AlGaN/GaN HFET Structures Grown by MOCVD Using Intermediate High Temperature AlGaN/GaN Superlattices

PDF / 269,148 Bytes
6 Pages / 612 x 792 pts (letter) Page_size
68 Downloads / 269 Views

L9.4.1

High-Quality AlGaN/GaN HFET Structures Grown by MOCVD Using Intermediate High Temperature AlGaN/GaN Superlattices Alexander Demchuk, Don Olson, Minseub Shin, Dan Olson, Peter Nussbaum, Andy Strom1, Simon Bates2, Frank Hofmann2, and Gordon Munns APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A. 1 now with Hysitron, Inc., 5251 W. 73rd Street, Minneapolis, MN 55439 2 Bede Scientific, 14 Inverness Drive East, Suite –100, Englewood, CO 80112, U.S.A. ABSTRACT We report on device quality Al0.28Ga0.72N/GaN heterostructures growth by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using intermediate AlxGa1-xN/GaN superlattices (SL) with x

Data Loading...

High-Quality AlGaN/GaN HFET Structures Grown by MOCVD Using Intermediate High Temperature AlGaN/GaN Superlattices

Recommend Documents

HgTe-CdTe Superlattices Grown by Photo-MOCVD

Characterization of Deep Levels in AlGaNGaN HEMT by FT-DLTS and Current DLTS

Cubic InGaN Grown by MOCVD

Deep Levels in High Resistivity AlGaN Films Grown by MOCVD

Cubic InGaN Grown by MOCVD

Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by MOVPE

Room-Temperature CW Operation of SQW Lasers on Si Grown with AiGaAs/AlGaP Intermediate Layers by MoCVD

TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer

Ohmic contact to GaN grown by MOCVD

Synthesis of In 0.1 Ga 0.9 N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Low-Temperature Photoluminescence of Mocvd GaAs Grown Directly on Si

High Temperature X-Ray Diffraction Study of PbTiO 3 Thin Films Grown on MgO(001) By MOCVD