Synthesis of In 0.1 Ga 0.9 N/GaN structures grown by MOCVD and MBE for high speed optoelectronics
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Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics Bandar Alshehri1, Karim Dogheche1, Sofiane Belahsene2, Bilal Janjua3, Abderrahim Ramdane2, Gilles Patriarche2, Tien-Khee Ng3, Boon S-Ooi3, Didier Decoster1, Elhadj Dogheche1 1 Institute of Electronics, Microelectronics & Nanotechnology, Optoelectronics Group (IEMN CNRS UMR 8520) Villeneuve d’ascq, France. 2 Laboratory for Photonics Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France. 3 Photonics Laboratory, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia. . ABSTRACT In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.
INTRODUCTION III-nitride materials have attracted considerable interest for their applications in electronics - photonics and faced a rapid technology evolution in latest years. Among the potential compounds, InGaN ternary alloys with their band gaps varying from 1 to 3.4 eV [1], are very promising for devices operating from UV to IR wavelength range [2]–[4]. Being robust, environmentally friendly and compact, this expands their application from military to space, as well as for light emitting diodes (LED) [5] and photovoltaic applications [6]. The optimization of epitaxial techniques has been delayed for several decades because of the lattice mismatch with the substrate. The information related to structural quality, dislocation density and optical properties is still highly required. Nowadays, sapphire substrates are generally chosen for the epitaxial growth of thin III-nitrides layers used in most electronic and optoelectronic devices, regardless of a large lattice mismatch of about 16% with GaN [7][8]. Metal Organic Chemical Vapor Phase Deposition (MOCVD) growth method, in addition to plasma-induced or gas-source Molecular Beam Epitaxy (MBE), which has more lately been introduced, allow the growth of device quality GaN and related compounds for a number of applications [9][10]. In this study, a comparative study of both single layer (SL) and multiple quantum well (MQW) In0.1Ga0.9N PIN micro-photodiodes (μPDs) is performed using these two growth techniques. Optical and
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