High Responsivity and Speed of 3D Graphene/InGaAs/InAs/InAlAs/Insb/InP HEMT Photodetector
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https://doi.org/10.1007/s11664-020-08451-w Ó 2020 The Minerals, Metals & Materials Society
High Responsivity and Speed of 3D Graphene/InGaAs/InAs/ InAlAs/Insb/InP HEMT Photodetector M. KHAOUANI
1,3
and Z. KOURDI2
1.—University Abouberk Belkaid, Tlemcen, Algeria. 2.—Center Exploitation Satellite Communications, Agency of Space, Oran, Algeria. 3.—e-mail: [email protected]
A high-responsivity 3D graphene/InGaAs/InAs/InAlAs/Insb/InP HEMT twodimensional electron gas (2DEG) photodetector is investigated and simulated using DevEdit and ATLAS 3D under SILVACO Tools. The InAs donor layer above the 2DEG contributes to the photocurrent using the InSb channel layer and graphene in the gate for light absorption. An illumination drain current equal to 57.5 mA was obtained with a rejection ratio (illumination current/dark current) equal to 1.02 A/W and 0.5 9 10 6 A/W available photocurrent, with high responsivity equal to 15.3 9 103 A/W at 100 nm wavelength and 100 GHz bandwidth. This property makes the device a suitable candidate for detection in the UV region of the spectrum. It can also be used in a number of medical, military and space applications. Key words: InGaAs, InAs, InAlAs, Insb, InP, UV, HEMT, Silvaco-TCAD
INTRODUCTION A wide variety of optoelectronic devices based on graphene are still being studied, and some of them have already reached a level of competitiveness that is comparable to that of conventional devices.1,2 Graphene is an emerging material with amazing properties. A large number of graphene-based devices in optoelectronics, electronics, bioengineering, and photonics have been developed, because this material offers several advantages as compared to other materials. Graphene is a high-performance functional two-dimensional (2D) atomic-scale material that is made of a single layer of carbon atoms organized in a hexagonal honeycomb lattice. Graphene possesses a linear energy dispersion relation, with the lowest effective mass, a high Fermi velocity (1/300 the speed of light), and huge electrical mobility, approaching 200,000 cm2/(V s).3–5 It is a new and rather special material; it is generally used in optoelectronic components like high-speed photodetectors. It has good electrical and optical
(Received May 28, 2019; accepted August 25, 2020)
characteristics.6–11 In addition, it presents high carrier mobility12 and broad spectral photoresponse.13,14 Moreover, the photonic properties of graphene are also remarkable. Though it is a singleatomic-layer material, it can absorb photons at least in the visible and infrared ranges of the spectrum; it also presents one the strongest interband optical transitions of all known materials.15,16 Over the past few years, ultraviolet (UV) detectors have garnered appreciable attention due to their numerous applications in the military and civilian realms. They are used in defense warning systems, UV communication, space science, environmental monitoring, industrial production, medicine and healthcare.17–19 On the other hand, group III-V semiconductor high electr
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