Hot Carrier Degradation in Semiconductor Devices
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within
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Hot Carrier Degradation in Semiconductor Devices
Hot Carrier Degradation in Semiconductor Devices
Tibor Grasser Editor
Hot Carrier Degradation in Semiconductor Devices
123
Editor Tibor Grasser Institute for Microelectronics Vienna University of Technology Wien, Austria
ISBN 978-3-319-08993-5 ISBN 978-3-319-08994-2 (eBook) DOI 10.1007/978-3-319-08994-2 Springer Cham Heidelberg New York Dordrecht London Library of Congress Control Number: 2014952459 © Springer International Publishing Switzerland 2015 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. Exempted from this legal reservation are brief excerpts in connection with reviews or scholarly analysis or material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Duplication of this publication or parts thereof is permitted only under the provisions of the Copyright Law of the Publisher’s location, in its current version, and permission for use must always be obtained from Springer. Permissions for use may be obtained through RightsLink at the Copyright Clearance Center. Violations are liable to prosecution under the respective Copyright Law. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. While the advice and information in this book are believed to be true and accurate at the date of publication, neither the authors nor the editors nor the publisher can accept any legal responsibility for any errors or omissions that may be made. The publisher makes no warranty, express or implied, with respect to the material contained herein. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Preface
Together with bias temperature instabilities and time-dependent dielectric breakdown, hot carrier degradation has been at the forefront of critical reliability issues for half a century. In earlier technologies, devices were operated at relatively high voltages in which highly energetic (“hot”) carriers are created in a rather straight forward manner. Using some lucky-electron arguments, where a solitary “lucky” hot carrier is able to cause device degradation, simple yet accurate reliability models could be constructed. In modern scaled technologies, however, the true origin of hot carrier degradation is much more subtle, requiring more detailed knowledge of the multi layered physics of defect creation. A
