Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence
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Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence Ruby Khan1,2 · Aman Arora2 · Anubha Jain2 · Brajesh S. Yadav2 · Jaya Lohani2 · Anshu Goyal2 · Kapil Narang2 · Garima Upadhyaya2 · Vikash K. Singh2 · Sachin K. Saini2 · R. Raman2 · M. V. G. Padmavati2 · Renu Tyagi2 · Rajesh K. Bag2 · Ufana Riaz1 Received: 8 March 2020 / Accepted: 12 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In this study, the GaN films were deposited in the multilayered structures under different growth conditions. SIMS analysis showed that intrinsic carbon incorporation around two orders can be controlled effectively by varying the growth parameters. Defects analysis by cross-sectional cathodoluminescence (X-CL) is demonstrated as a useful analytical technique for unambiguously understanding the effect of incorporation of the intrinsic carbon concentration on the yellow luminescence (YL) and blue luminescence (BL) band intensities. It was inferred from the experimental data that the observed BL and YL NON complex, respectively. This finding is in intensities are due to the electronic transitions through the isolated CN and C contrast to the theoretically published literature that two charged states of CN are responsible for both BL and YL which sought that the BL emission to be always smaller in comparison to YL emission. Our experimental data, for all different growth conditions showed the prominent BL in comparison to YL except for the growth at sufficiently lower temperature which is considered to be more conducive for higher oxygen incorporation into the stoichiometry. This increases the probability of C NON formation which is manifested in the enhancement of YL intensity over BL as the formation energy of C NON complex is lower than the C N defect. Thus, X-CL analysis method can be key to address the challenges of understanding the impurity character in multi-thin layered GaN structures.
1 Introduction GaN-based electronic devices in recent past have demonstrated their capability to be the promising candidate for the next generation power devices with low on-resistance. GaN-based high-electron-mobility transistor (HEMT), is an engineering marvel for the high power and high frequency device applications, owing to the possession of desirable material properties [1, 2]. However, these devices are still pegged with reliability issues related to point defects which are more challenging to address in comparison to their well-established counter part of * Anshu Goyal [email protected] * Ufana Riaz [email protected] 1
Department of Chemistry, Jamia Millia Islamia, New Delhi 110025, India
Solid State Physics Laboratory (SSPL), DRDO, New Delhi 110054, India
2
Si- and GaAs-based devices. In AlGaN/GaN HEMT power devices, a semi-insulating (SI) GaN buffer layer is required for complete channel pinch-off and good electrical isolation between devices. As grown GaN layers usually have n-type conductivity due to the presence
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