Improved properties of Pb(Zr 0.52 Ti 0.48 )O 3 films by hot plate annealing on LaNiO 3 bottom electrode
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ORIGINAL PAPER: FUNCTIONAL COATINGS, THIN FILMS AND MEMBRANES ( I N CL U D I N G D E P O S I T I O N T E C H N I Q U E S )
Improved properties of Pb(Zr0.52Ti0.48)O3 films by hot plate annealing on LaNiO3 bottom electrode S. Q. Yin1 A. D. Liu1 Y. Y. Zhang1 K. S. Venkatesh1 M. Manikandan1 Y. C. Shi1 P. Y. Chen1 M. Z. Hou1 S. Y. Shang1 J. Shang1 X. W. Wang1 ●
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Received: 15 May 2020 / Accepted: 22 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Pb(Zr0.52Ti0.48)O3 (PZT) perovskite ferroelectric thin films were fabricated on LaNiO3 buffer silicon substrate by sol–gel spin coating technique. The thickness of PZT films was about 150 nm, and the thickness of LNO films as electrodes was about 120 nm. The prepared PZT thin films were annealed by hot plate annealing and conventional electric furnace annealing at various temperatures for 30 min. The microstructure of annealed films was analyzed by different techniques. The obtained results demonstrated that the perovskite phase can be achieved in films by both methods of annealing. Structural and morphological characterizations substantiated that hot plate annealing method can facilitate the formation of perovskite phase of PZT films than the electric furnace annealing. Consequently, the films annealed using hot plate exhibited more excellent electrical properties. The higher dielectric permittivity, remnant polarization, and the lower dielectric dissipation were observed for the thin films annealed at 550 °C by the hot plate. The values of remnant polarization and coercive field of PZT annealed on the hot plate were 36.4 μC/cm2 and 168 kV/cm, respectively. These results demonstrated that the crystallization of ferroelectric PZT films was improved by hot plate annealing. Graphical Abstract
These authors contributed equally: S. Q. Yin, A. D. Liu, Y. Y. Zhang * X. W. Wang [email protected] 1
Laboratory of Functional Materials, School of Physics, Henan Normal University, and Henan Key Laboratory of Photovoltaic Materials, Xinxiang 453007, China
Journal of Sol-Gel Science and Technology
Keywords
PZT films Sol–gel spin coating Ferroelectric properties Hot plate annealing ●
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Highlights 1. PZT thin films were fabricated on LaNiO3 buffer by sol–gel technique. 2. The prepared PZT thin films were annealed by two different methods. 3. We controlled the same preparation process for the samples. 4. Annealing on a hot plate can favor the crystal growth of PZT films. 5. The films annealed on the hot plate revealed better electrical properties.
1 Introduction Perovskite Pb(ZrxTi1-x)O3 (PZT) films at the morphotropic phase boundary are being focused with great attention due to their characteristics of low operating voltage and high switching speed, which could be applied in various functional devices, such as the pyroelectric detectors, nonvolatile random access memories, high-frequency transducers, high value capacitors, solid-state displays, and infrared detectors [1–3]. There are many methods a
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