Improvement of phase transition properties of magnetron sputtered W-doped VO 2 films by post-annealing approach
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Improvement of phase transition properties of magnetron sputtered W‑doped VO2 films by post‑annealing approach Zhangying Huang1 · Zhiming Wu1 · Chunhui Ji1 · Jinhong Dai1 · Zihao Xiang1 · Dan Wang1 · Xiang Dong1 · Yadong Jiang1 Received: 6 November 2019 / Accepted: 20 January 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In this work, we investigate the improvement of the thermochromic properties of W-doped vanadium dioxide ( VO2) films induced by annealing temperatures. Firstly, W-doped VO2 films with different W contents were successfully prepared on quartz substrates by direct current (DC) reactive magnetron sputtering. The results show that the W element not only decrease the phase transition temperature of V O2 film but also seriously decrease the infrared modulation performance of the film. Secondly, Undoped and W-doped V O2 films with different annealing temperatures were prepared and characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and scanning electron microscopy (SEM) tests. The effect of annealing temperature on the chemical states, crystal structure, and surface morphology of W-doped V O2 films was analyzed. It is found that VO2 film with the 1.4 at.% ratio of W contents has excellent metal–insulator phase transition performance compared to undoped VO2 film at the annealing temperature of 400 °C, i.e., narrower hysteresis width (4.3 °C) and lower phase transition temperature (37.4 °C). More importantly, the infrared amplitude modulation of the film is closer to that of undoped V O2 films. This is attributed to the enhanced (011) diffraction peak intensity and larger particle size and obvious grain boundary in the film. This work shows proper annealing temperatures can maintain the phase-change amplitude modulation performance of W-doped VO2 films while lowering the phase transition temperature and have great potential for infrared modulation applications.
1 Introduction The functional materials’ surface morphology and structure will change with external conditions such as temperature, electric, magnetic, etc., which cause its macroscopic properties such as optics, electricity, and magnetism to change, so it has important research value in optoelectronics and microelectronics [1–4]. Vanadium dioxide (VO2) materials have unique reversible metal–semiconductor phase transition characteristics (MIT) [5], and its significant changes in infrared optical transmittance before and after phase transition make it have broad application in spectroscopy, remote * Zhiming Wu [email protected] * Xiang Dong [email protected] 1
School of Optoelectronic Science and Engineering, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of China
sensing, medical, environmental protection, and other aspects [6]. In recent years, the application of VO2 in infrared optical switch modulation devices has received great attention
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