In-Plane Ferroelectricity in Strontium Titanate Thin Films

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In-Plane Ferroelectricity in Strontium Titanate Thin Films K.F. Astafiev1, V.O. Sherman1, M. Cantoni1, A.K. Tagantsev1, N. Setter1, P.K. Petrov2, T. Kaydanova3, and D.S. Ginley3 1

Ceramics Laboratory, Swiss Federal Institute of Technology, EPFL, 1015 Lausanne, Switzerland. 2 Centre of Physical Electronics and Materials, South Bank University, 103 Borough Road, London SE1 0AA, UK. 3 National Renewable Energy Laboratory, Golden, 1617 Cole Boulevard, CO 80401, USA.

ABSTRACT The results of structural and electrical characterizations of SrTiO3 thin films deposited onto LaAlO3 substrates by pulsed laser deposition technique are presented. The appearance of the ferroelectric phase in these films has been experimentally documented, the transition temperature being in the range of 90-120K. The hysteresis loops have been monitored in a wide temperature range by using thin film planar capacitors, the driving field being predominantly in the plane of the film. The switching properties of the films has been studied at low temperatures (~25K) and well saturated loops have been observed with relatively low coercive field (

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