In Situ Deformation Studies of Fe/Al and Fe/Si Multi-Layered Films Prepared by Ion Beam Sputtering
- PDF / 239,602 Bytes
- 5 Pages / 420.48 x 639 pts Page_size
- 6 Downloads / 200 Views
IN SITU DEFORMATION STUDIES OF Fe/Al AND Fe/SI MULTI-LAYERED FILMS PREPARED BY ION BEAM SPUTTERING K.Kubota, and M.Naoe Dept. of Physical Electronics, Tokyo Institute of Technology 2-12-1 0-okayama, Meguro-ku, Tokyo 152, Japan. ABSTRACT In situ deformation measurements of Fe/Al and Fe/SI multilayered films on thin substrates were made by detecting the curvature of substrates during deposition. The deformation inside of Fe layers corresponding to the compressive and tensile stresses was detected for the Fe/Al and Fe/SI multilayered films, respectively. For the Fe/Si multi-layered fi.lms, the Internal stress in Fe layers became from tensile to compressive during deposition under bombardment of Ar Ions. These stresses in Fe layer were closely related to the soft magnetic properties of these multi-layered films. In situ deformation studies may be useful to make sure the effect of Internal stress on the magnetic properties of these multilayered films. INTRODUCTION It is well known that magnetic multi-layered films composed of Fe and Al layers exhibit excellent soft magnetic properties and the internal stress in the magnetic Fe layer may remarkably affect the magnetic properties of these films.[l] Therefore, measurement of stress distribution [2] in the Fe is important for investigating the change in soft magnetism of the multi-layered films In detail. The specimens of Fe/Al and Fe/Si multi-layered films were prepared by ion beam sputtering method and the relationships between stress distributions and soft magnetic properties were clarified in this study. EXPERIMENT A dual Ion-beam sputtering apparatus was used In this study. Planar targets of Fe, Al and SI each with purity higher than 99.99 % were alternately sputtered by a argon ions from a sputtering Ion source at an accelerating voltage of 500 V and total ion current of 3 mA. For some cases, the surface layer of the growing film was bombarded by stable argon ions from a bombarding Ion source at an accelerating voltage of 250 V and current density of about 20 pA/cm2 . Figure 1 shows the schematic diagram of system for In situ detection of the change in substrate curvature during the deposition. Mica sheets with thickness of 0.02 mm were used as substrates, and the substrate curvature was detected during deposition of multi-layered film. Young's modulus of the mica substrate used In this study was determined by bending the substrate. The beam spot of He-Ne laser was focused from the outside of the vacuum chamber through a glass viewing port to distance of 5 mm from the supporting edge of the substrate, and the positional change of the reflected spot was measured on the plate at distance of 4.5 m from the substrate, plane. Since even Mat. Res. Soc. Symp. Proc. Vol. 239. 01992 Materials Research Society
488
the small curvature change during deposition can be detected by using this system, the distribution of internal stress along the direction of thickness can be accurately known. On the assumption that the structure and internal stress distribution of the films do no
Data Loading...
