In-situ Fiberoptic Thermometry Measurements of Wafer Temperature During Plasma Etching Using an Electron Cyclotron Reson
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Fig. 5. InP etch rate and wafer temperature plotted versus time when 500 W microwave power is used. The etch conditions were 100 W rf power, C12/Ar at 10/10 sccm, 2 mTorr, and 8 cm.
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Fig. 6. InP etch depth as a function of time with (dashed line) and without (solid line) temperature control of the stage. The etch conditions were the same as in Fig. 4.
the etch initiation time and the presence of surface oxide. With 1 min etch time, the local average etch rate increased to 2.0 gm/min even though the temperature is
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