Investigating the Wafer Temperature in an Atmospheric-Pressure Plasma Process
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Investigating the Wafer Temperature in an Atmospheric-Pressure Plasma Process Gi-Chung Kwon,∗ Woo Jae Kim, Tae Hyun Lee, Hwan Hee Lee, Hee Tae Kwon and Gi Won Shin Department of Electrical and Biological Physics, Kwangwoon University, Seoul 01890, Korea (Received 16 January 2020; revised 10 March 2020; accepted 10 June 2020) The atmospheric-pressure plasma (APP) process is used in various fields nowadays. One important characteristic of the APP process is the temperature of the wafer heated by the atmosphericpressure plasma. In this study, the effects of the input power and the discharge distance on the heat generated during the atmospheric plasma process were analyzed, and the mechanism was predicted. We used a fluoroptic thermometer and infrared camera to measure the wafer temperature and a VI probe and a current probe to measure the electrical properties. The results showed that, as the input power was increased, the wafer temperature increased, and as the discharge distance was increased, the wafer temperature decreased. Thus, we can confirm that resistance heating was the mechanism that caused the wafer temperature to rise; it is related to the current intensity and the resistance of the current flowing through the wafer. Keywords: Atmospheric-pressure plasma, Plasma treatment process DOI: 10.3938/jkps.77.477
I. INTRODUCTION The atmospheric-pressure plasma (APP) process has recently been used in various fields because of its low process cost. It is widely applied to processes like those used with semiconductors [1] and solar cells [2,3] as well as those used for food processing [4], medical treatments [5, 6], and surface-treatment processes [7, 8]. One important characteristic of APP process is the heat generated in the substrate, e.g., a wafer, during the APP process. The APP process can be applied to various wafer heat-treatment processes by using the heat generated by the plasma. The furnace method used in conventional heat-treatment techniques and other lowand high-temperature processes has comparatively high equipment and maintenance costs [9,10]. Whereas, APP processes have lower equipment and maintenance costs [11]. However, because too many variables affect the APP process, characterizing it is still difficult. Therefore, in this study, we analyzed the effects of various parameters on the heat generated during the APP process and predicted the mechanism.
six-inch wafer (p-type, 111) was used as the sample. The wafer’s resistivity was 1.5 Ω·cm, and its thickness was 180 μm. Before the APP treatment, we performed the sawdamage removal (SDR) process and a surface-texturing process for the same amount of time as a conventional solar-cell process. The texturing process was carried out for 30 minutes in a NaOH 8% aqueous solution heated to 80 ◦ . SC-1 (5 H2 O:1 H2 O2 :1 NH4 OH), HF (5%), and SC2 (6 H2 O: 1 H2 O2 :1 HCl) cleaning solutions were used to clean the wafer [12]. Then, the wafer was immersed in distilled water and ultrasonically cleaned for five minutes to remove the byproducts on its surface. Finally, the
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