Influence of Al, In codoping in enhancing the Figure of Merit of ZnO thin films for TCO Applications
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Inuence of Al, In codoping in enhancing the Figure of Merit of ZnO thin lms for TCO Applications Vinoth Kumar Jayaraman, Arturo Maldonado Alvarez and Maria De la Luz Olvera Amador MRS Advances / Volume 1 / Issue 02 / January 2016, pp 133 - 139 DOI: 10.1557/adv.2016.40, Published online: 19 January 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116000402 How to cite this article: Vinoth Kumar Jayaraman, Arturo Maldonado Alvarez and Maria De la Luz Olvera Amador (2016). Inuence of Al, In codoping in enhancing the Figure of Merit of ZnO thin lms for TCO Applications. MRS Advances, 1, pp 133-139 doi:10.1557/ adv.2016.40 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.40
Influence of Al, In codoping in enhancing the Figure of Merit of ZnO thin films for TCO Applications Vinoth Kumar Jayaraman, Arturo Maldonado Alvarez and Maria De la Luz Olvera Amador Department of Electrical Engineering, Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV-IPN), Apartado Postal 14740, México City, México. ABSTRACT AIZO (Al and In codoped ZnO) thin films were deposited on soda lime glass substrates by the ultrasonic spray pyrolysis (USP) technique. The spraying solution was prepared from zinc acetate dihydrate, aluminum acetyl acetonate and indium acetate. Depositions were carried out at three different temperatures, 425, 450 and 475 °C. Structural, morphological, optical and electrical properties were examined with respected to the deposition temperatures. All AIZO films grown with (002) preferential orientation confirmed from X-ray diffraction analysis. Hexagonal nanostructures were observed from Scanning electron microscopy (SEM) analysis. Minimum electrical resistivity of 2.52 x10-3 :-cm was achieved for AIZO films. INTRODUCTION ZnO is an interesting material among researchers in recent times for its wide area of applications such as transparent conductive oxide (TCO) electrodes, solar cells, light emitting diodes, liquid crystal displays and transistors [1-5]. ZnO has a bandgap around 3.37eV and high exciton binding energy of 60 meV [6, 7]. Since undoped ZnO films present a very high electrical resistivity its application is limited in the optoelectronic field, hence it is mandatory to improve the electrical properties by doping. This doping process can be reached with a cationic element of group III, for example, In, Ga, Al, or with an anionic element of group VII, for example, F, Cl. In both cases the improvement of the electrical properties on ZnO thin films has been widely studied [8-15]. Though doped ZnO thin films can be prepared by various physical and chemical techniques, such as sputtering [16], ultrasonic spray pyrolysis (USP) [17], chemical vapor deposition [18], pulsed laser deposition [19], thermal evapora
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