Influence of Annealing Temperature Variations on the Properties of Chemically Deposited Nanocrystalline Zinc Selenide Th
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URFACES, INTERFACES, AND THIN FILMS
Influence of Annealing Temperature Variations on the Properties of Chemically Deposited Nanocrystalline Zinc Selenide Thin Films T. A. H. Mira, R. A. G. Shaikha, D. S. Patila, and B. K. Sonawanea,* a
Department of Electronics, School of Physical Sciences, Kavayitri Bahinabai Chaudhari North Maharashtra University, Jalgaon, Maharashtra, 425001 India *e-mail: [email protected] Received July 17, 2020; revised July 17, 2020; accepted August 13, 2020
Abstract—In the present report, influence of annealing temperature variations on the optical, morphological, and structural properties of chemically deposited nanocrystalline zinc-selenide thin films is studied employing an X-ray diffractometer, scanning electron microscope, and UV spectroscope. As-synthesized and annealed films exhibit nanocrystalline nature with cubic structure. The result shows that ZnSe thin films contain spherical particles that are composed of nanocrystals ranging from 3 to 7 nm crystallite size. The SEM studies reveal that the inter-crystalline spaces have been found to be reduced with an increase in grain size as annealing temperature increases. The EDS data reveal that the obtained thin films are rich in selenium. However, thermal annealing assisted to reduce the non-stoichiometric nature of the films by reducing selenium content that was found to be reduced with a rise in annealing temperature. The reduction in strains and dislocation density was observed after the annealing process. The band-gap energy was found to be raised from 2.56 to 2.76 eV with a rise in annealing temperature. The transmittance of more than 80% was recorded by as-synthesized and annealed films as well. Keywords: chemical bath deposition, annealed ZnSe films, optical properties DOI: 10.1134/S1063782620120234
1. INTRODUCTION Zinc selenide II–VI group zinc chalcogenide has gained attention in the optoelectronic industry due to its brilliant properties like wide band gap, higher refractive index, and minimum optical absorption in the visible–infrared spectrum. The properties of this chalcogenide like band gap, film thickness, transmission and absorption wavelengths are explored to facilitate its use in solar cell applications [1]. One of the reasons for the inclusion of ZnSe in solar applications lies in the fact that cadmium being highly-toxic material [2, 3] that dominated the solar industry for a long time needs to be replaced by other suitable materials. The features of zinc selenide like wide band gap, good conduction band, better lattice matching with Cu(In, Ga)Se2(CIGS)-based absorbers, and lesser toxicity make it a suitable candidate for solar-cell applications [4–6]. The various thin film fabrication methods such as pulsed laser deposition [7], physical vapor deposition [8], spray pyrolysis [9], successive ionic layer adsorption and reaction (SILAR) [10], sol–gel deposition [11], and chemical-bath deposition method [12–15] are available. The chemical-bath deposition method known for its simplicity, affordable laboratory in
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