Influence of Mechanical Stress on the Electrical Performance of Polycrystalline-Silicon Resistors
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INFLUENCE OF MECHANICAL STRESS ON THE ELECTRICAL PERFORMANCE OF POLYCRYSTALLINE-SILICON RESISTORS
M. Nakabayashi, H. Ohyama*, E. Simoen**, M. Ikegami, C. Claeys**, K. Kobayashi*, M. Yoneoka*, Y.Takami***, H. Sunaga**** and H. Takizawa****
Mitsubishi Electric Co., 997 Miyoshi Nishigoshi Kumamoto, 861-1197 Japan *Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102 Japan **IMEC, Kapeldreef 75, B-3001 Leuven, Belgium ***Rikkyo University, 2-5-1 Nagasaka Yokosuka Kanagawa, 240-0101 Japan ****Takasaki JAERI, 1233 Watanuki Takasaki Gunma, 370-1292 Japan Tel. : +81-96-242-6007; Fax. : +81-96-242-5890 e-mail : [email protected]
Key words: Poly-Si film implanted boron and phosphorus, resistance, mechanical stress,
Paper submitted for proceeding at Materials Research Society’s Spring 2000 Meeting A29.3.1
(Symposium A : Amorphous and Heterogeneous Silicon Thin Films-2000), San Francisco, USA, April 24-28, 2000. INFLUENCE OF MECHANICAL STRESS ON THE ELECTRICAL PERFORMANCE OF POLYCRYSTALLINE-SILICON RESISTORS M. Nakabayashi, H. Ohyama*, E. Simoen**, M. Ikegami, C. Claeys**, K. Kobayashi*, M. Yoneoka*, Y.Takami***, H. Sunaga**** and H. Takizawa**** Mitsubishi Electric Co., 997 Miyoshi Nishigoshi Kumamoto, 861-1197 Japan *Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102 Japan **IMEC, Kapeldreef 75, B-3001 Leuven, Belgium ***Rikkyo University, 2-5-1 Nagasaka Yokosuka Kanagawa, 240-0101 Japan ****Takasaki JAERI, 1233 Watanuki Takasaki Gunma, 370-1292 Japan ABSTRACT Results are presented of a study on the mechanical stress dependence of the resistance of polycrystalline silicon (Poly-Si) films, doped with different atomic species. Two types of Poly-Si film implanted with boron and phosphorus ions were studied, namely, B-doped films of 400 nm and P-doped layers of 250 nm thickness, which were deposited by LPCVD at 620 °C on thermally oxidized silicon wafers. Film doping was done by ion implantation at 50 keV, with a dose of boron and phosphorus of 2 x 1014 and 5.3 x 1014 cm-2, respectively. The Poly-Si films were annealed in a H2 ambient at 1000 ºC for 20 min to activate the implanted atoms. A controlled amount of external stress was applied to the silicon wafers in order to study the impact on the electrical performance of the implanted Poly-Si resistors. The resistance of the B-doped Poly-Si films is shown to increase by the mechanical stress, while the resistance of the P-implanted Poly-Si films remained unchanged. It is concluded that this difference is related to the structural differences between Poly-Si films implanted with boron and phosphorus, respectively. INTRODUCTION There is currently a strong interest in analog microwave silicon-based technologies for mobile telecommunications applications. This high-frequency potential of Bipolar (Bi), Complementary Metal-Oxide-Semiconductor (CMOS) or BiCMOS can be realised by downscaling the technologies to the submicron regime and below. However, beside the active components, there is also a need to integrate the pa
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