Influencing Factors of Reheating Shrinkage Rate of Glass Substrate on LTPS Process
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https: //doi. org/10.1007/s11595-020-2307-4
Influencing Factors of Reheating Shrinkage Rate of Glass Substrate on LTPS Process WANG Weilai1, TIAN Yingliang1,2*, WANG Wei1, LIU Yaru1, SUN Shibing1, LÜ Feng1, CHEN Xinxin1
(1. Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China; 2. National Engineering Laboratory for Technology and Equipment on Flat Panel Display Glass, Shijiazhuang 050000, China)
Abstract: Different heating treatments with the variation of heating rates, holding temperatures and holding time were used to simulate the LTPS procedure. The experimental results show that the reheating shrinkage rates of glass substrates are rarely changed with increasing the heating rate, but strongly enhanced by raising the holding temperature and time, which shows that the reheating shrinkage of glass is closely related to heat treatment and structural relaxation. The production process of glass is critical to the reheating shrinkage of glass. Key words: low temperature ploy-silicon(LTPS); glass substrates; reheating shrinkage rate; structural relaxation
1 Introduction Ultra-thin electronic glass substrates are key materials for LCD/OLED flat panel display products. With the development of display industry, consumers are increasingly demanding high resolution, contrast and refresh rate of flat panel display products[1,2]. The LTPS (low temperature poly-silicon) technology is of great importance in the performance of flat panel display products. Low temperature poly-silicon technology converts amorphous silicon (a-Si) into polycrystalline silicon (pSi) by heat treatment crystallization technology when thin film transistor (TFT) is fabricated on glass substrates[3,4]. The preparation methods of polycrystalline silicon (p-Si) thin film transistors include low pressure chemical vapor deposition (LPCVD)[5], catalytic chemical vapor deposition (Cat-CVD)[6], solid phase crystallization (SPC)[7], rapid thermal annealing (RTA)[8], metal induction lateral crystallization (MILC)[9], microwave crystallization[10], and laser crystallization (LC)[11]. Most of these LTPS methods undergo a heat crystalliza© Wuhan University of Technology and Springer-Verlag GmbH Germany, Part of Springer Nature 2020 (Received: Aug. 21, 2019; Accepted: Nov. 7, 2019) WANG Weilai(王伟来): E-mail:[email protected] *Corresponding author: TIAN Yingliang(田英良): Prof.; Ph D; E-mail: [email protected] Funded by the National Key R&D Program of China (2017YFB0310201-04)
tion at 450-600 ℃, which will lead to structural relaxation of glass substrates due to heating and shrinkage of glass substrates. Therefore, the reheating shrinkage rate becomes an important assessment index of glass substrates. Due to the reheating shrinkage of glass substrates, when the TFT substrates (for LTPS) and CF glass substrates (for color film and CF, not for LTPS) are combined into the boxes, they will be dislocation. The size of high-resolution pixels is less than 100 microns. When the size of the dislocation is too large, there will
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