InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN Templates.
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InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN Templates. A. Syrkin *1, A. Usikov 1, V. Soukhoveev1, O. Kovalenkov1, V. Ivantsov1, V. Dmitriev1, C. Collins2, E. Readinger2, N. Shmidt3, S. Nikishin4, V. Kuryatkov4, D. Song4, M. Holtz4. 1
Technologies and Devices International, Inc. 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A. 2 U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, U.S.A. 3 Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Str., St.-Petersburg 194021, Russia. 4 Texas Tech University, Lubbock, TX 79409, U.S.A. ABSTRACT This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 650ºC. Arrays of nano-crystalline InN rods with various shapes were grown directly on sapphire substrates. Continuous InN layers were grown on GaN/sapphire, AlN/sapphire and AlGaN/sapphire template substrates. X-ray diffraction rocking curves for the (00.2) InN reflection exhibit the full width at half maximum (FWHM) as narrow as 0.075 deg. for the nano-rods and 0.128 deg. for the continuous layers grown on GaN/sapphire templates. INTRODUCTION Group III nitride compounds using InGaN-based active regions have attracted much attention as structures for short wavelength emitters operated in visible spectral range. Ability to grow high-quality thick InN-based active layers thought to be a way for further increasing the light emitters efficiency. Hydride vapor phase epitaxy (HVPE) is well-known method to produce both thick low-defect GaN, AlGaN, AlN templates and free-standing GaN substrates for nitride device fabrication. One of the major technical issues in the development of InN materials is low dissociation temperature and high dissociation pressure of InN. Results of InN and InGaN growth by HVPE are limited. First experiments have been reported more than 25 years ago when InN layers were grown using reaction between ammonia and InCl3 [1]. More recently several research teams reported HVPE growth of InN-containing materials [2-4]. This paper is reporting results on HVPE growth of InN nano-rods and continuous layers on various substrates. Structural, electrical and optical characteristics of grown materials are presented. GROWTH PROCEDURE AND RESULTS The growth processes were carried out at atmospheric pressure using home-built TDI HVPE growth machines with a hot wall quartz tube reactor and resistively heated furnaces. Ammonia (NH3) and hydrogen chloride (HCl) were used as active gases and argon served as a carrier gas. Metallic indium (99.999%) was used for source material. The growth was performed on 2-inch sapphire substrates and also on HVPE grown GaN/sapphire, AlN/sapphire, and AlGaN/sapphire templates fabricated in separate HVPE processes. Growth temperature was varied from 500º to 625ºC. I
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