InN on GaN Heterostructure Growth by Migration Enhanced Epitaxial Afterglow (MEAglow)
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InN on GaN Heterostructure Growth by Migration Enhanced Epitaxial Afterglow (MEAglow) Peter W. Binsted1, Kenneth Scott A. Butcher1,2, Dimiter Alexandrov1,2, Penka Terziyska1, Dimka Georgieva1, Rositsa Gergova1, Vasil Georgiev1,2 1
Electrical Engineering, Semiconductor Research Lab, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1, Canada 2
Meaglow Ltd., 1294 Balmoral St, Suite 150, Thunder Bay, ON P7B 5Z5, Canada
ABSTRACT In this paper we discuss the formation of InN on GaN heterostructures. Film growth was accomplished using a new method coined Migration Enhanced Epitaxial Afterglow (MEAglow), an improved form of pulsed delivery Plasma Enhanced Chemical Vapour Deposition (PECVD) [1]. Initial x-ray diffraction (XRD) analysis results indicated that an InGaN alloy layer formed under the InN during growth. No GaN was seen from the original buffer layer. It was postulated that indium metal deposited prior to complete nitridation diffused into the relatively thin GaN layer producing InGaN. To verify the integrity of the insulating GaN layer, a third party GaN substrate was substituted. Results were unchanged. Parameters were then modified to reduce the amount of indium used for the initial metal deposition. XRD results indicated a sharper interface between the semi-insulating GaN and conductive InN layer. Hall Effect measurements are included. We’ve shown that the growth of a device suitable heterostructure is possible using the MEAglow technique. INTRODUCTION Improving the fabrication of device quality heterostructures is crucial to the advancement of III-V semiconductors. Such a heterostructure is essential for developing InN for applications in light emitting diodes (LED), solar cells, and field effect transistors (FET). Current interest in nitride semiconductors has roots in the development of LED technology, and it is projected that worldwide revenue from LEDs will rise to $16.2 billion in 2014 [2]. There have been many important developments in group III-Nitride semiconductors since the early 1990s [3]. The material group now offers many advantages over traditional devices in applications such as LEDs, sensor applications, FETs, and solar cells. InN devices in particular offer potential in a wide range of applications including high frequency microwave transistor applications extending to harsh environments with high temperatures and high levels of radiation. InN devices are also inherently suitable for high speed operation due to an achievable high electron mobility well above that of similar materials such as silicon [4] while the direct band gap provides for a high efficiency in applications such as solar cells and LEDs. Recent improvements over traditional Metal Organic Chemical Vapour Deposition (MOCVD) processes indicate the potential for significant reductions in production cost, while maintaining an equal or higher level of material quality. Lower temperature growth in particular will allow for a greater amount of indium incorporation in the current generation of devices. One such recent imp
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