Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular
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Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy Peng Wang1,2 (), Hedong Chen1, Hao Wang3, Dan Wang4, Changkun Song1, Xingyu Wang1, Hongjie Yin1, Lujia Rao1, Guofu Zhou1,2,5 (), and Richard Nötzel1,2 () 1
Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China 2 National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, China 3 Department of Physics, Xiamen University, Xiamen 361005, China 4 Analysis & Testing Center, South China Normal University, Guangzhou 510631, China 5 Academy of Shenzhen Guohua Optoelectronics, Shenzhen 518110, China © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020 Received: 27 August 2020 / Revised: 5 October 2020 / Accepted: 22 October 2020
ABSTRACT InGaN nanowires (NWs) are grown on pyramid textured Si substrates by stationary plasma-assisted molecular beam epitaxy (PA-MBE). The incidence angles of the highly directional source beams vary for different pyramid facets, inducing a distinct inter-facet modulation of the In content of the InGaN NWs, which is verified by spatial element distribution analysis. The resulting multi-wavelength emission is confirmed by photoluminescence (PL) and cathodoluminescence (CL). Pure GaN phase formation dominates on certain facets, which is attributed to extreme local growth conditions, such as low active N flux. On the same facets, InGaN NWs exhibit a morphology change close to the pyramid ridge, indicating inter-facet atom migration. This cross-talk effect due to inter-facet atom migration is verified by a decrease of the inter-facet In content modulation amplitude with shrinking pyramid size. A detailed analysis of the In content variation across individual pyramid facets and element distribution line profiles reveals that the cross-talk effect originates mainly from the inter-facet atom migration over the convex pyramid ridge facet boundaries rather than the concave base line facet boundaries. This is understood by first-principles calculations showing that the pyramid baseline facet boundary acts as an energy barrier for atom migration, which is much higher than that of the ridge facet boundary. The influence of the growth temperature on the inter-facet In content modulation is also presented. This work gives deep insight into the composition modulation for the realization of multi-color light-emitting devices based on the monolithic growth of InGaN NWs on pyramid textured Si substrates.
KEYWORDS pyramid textured Si substrate, composition modulation, III-nitride, nanowire, molecular beam epitaxy, stationary growth, cross talk
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Introduction
GaN and its related compounds have found ample applications for their superior physical properties in light emitting diode (LED) lighting and displays [1–5], high power radio frequency (RF) powe
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