Interfacing Ag Nanoparticles with 1D Semiconductor Micro/Nanostructures via Joule Heating for Transfer Printing Nanodevi
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Interfacing Ag Nanoparticles with 1D Semiconductor Micro/Nanostructures via Joule Heating for Transfer Printing Nanodevices at Room Ambient Logeeswaran VJ1, Aaron M. Katzenmeyer2, Mark Triplett1,3, Matthew Ombaba1 & M. Saif Islam1 1
Department of Electrical and Computer Engineering, University of California-Davis, CA 95616.
2
Sandia National Laboratories, Livermore, CA 94551.
3
Department of Physics, University of California-Davis, CA 95616.
ABSTRACT We describe an experiment to interface and characterize silver nanoparticle (AgNPs) aggregates that are self-assembled and plastically deformable on a thin gold (Au) film deposited on glass substrate. The electrical characterization is done using an electrical nanoprobe attached to a nano-manipulator inside a scanning electron microscope (SEM). Electrical current-voltage (I-V) measurements are made between the electrical nanoprobe in contact with the nanoparticle and the Au film. The Ag nanoparticles have diameters ranging between ~200-800nm and are self-assembled on a thiolated 100nm Au film. Application of a contact force via the nanoprobe even after substantial particle deformation reveals initially a small non-linear current. Upon current annealing through Joule heating, significant improvement in the electrical contact at the AgNP/substrate interface was observed. This is most likely based on bonding of the AgNPs to the Au film after passage of a high current. The need for such an annealing/sintering step will be critical in forming good ohmic contacts at ambient conditions during transfer printing of semiconductor micro/nanopillars.
INTRODUCTION We had previously reported a heterogeneous integration technique for multi-material semiconductor devices by fracture transfer printing of one-dimensional (1-D) micro/nano- pillars into a low cost carrier substrate embedded in polymer matrices allowing for fabrication of the next generation of high performance devices in energy storage and conversion [1,2]. This technique incorporates a direct transfer of 1-D micro/nano- pillars while preserving the orientation, fidelity, and array spacing from the mother substrate to the carrier substrate. In implementing this technology, considerations for significant manufacturing cost, lack of substrate flexibility, material structural mismatch and formation of low resistance (ohmic) electrical contacts still persist and efforts to scale up the process for cost-effective solutions, especially for applications in photovoltaics, sensors, energy conversion and storage, remains unfulfilled. Importantly, establishing electrical contact for these active 1-D devices remains an on-going challenge requiring continuous process optimization. A two-terminal electrical contact can be formed to these devices based on the fracture transfer process. In one scheme, silver
nanoparticles (AgNPs) can be dispersed in a thermoplastic polymer matrix and during the transfer the AgNPs are trapped between the pillars and a conductive film thus completing the electrical circuit while still maintaining t
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