Investigation of FePt electrode induced influence on resistive switching characteristics of SiO 2 -based RRAM
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Investigation of FePt electrode induced influence on resistive switching characteristics of SiO2-based RRAM C. Sun1,2, S. M. Lu1,2, F. Jin1,2, W. Q. Mo1,2, J. L. Song1,2, and K. F. Dong1,2,*
1 2
School of Automation, China University of Geosciences, Wuhan 430074, China Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems, Wuhan 430074, China
Received: 30 July 2020
ABSTRACT
Accepted: 18 September 2020
To improve the resistive switching performance of RRAM devices, it is desirable to find electrodes with good ability of oxygen reservoir. In this paper, bipolar switching mode of TiN/SiO2/FePt devices is achieved by using FePt as oxygen reservoir, since O atoms will be absorbed by Fe atoms to form FeOx film. Therefore, the oxygen reservoir’s ability can be evaluated by the molar ratio of FeOx in FePt film and it is found that the more molar ratio of FeOx the stronger oxygen reservoir’s ability is obtained. Interestingly, the self-rectifying characteristics in the devices with FePt electrode is observed due to the different work functions between TiN (4.7 eV) and FePt ([ 5 eV). Furthermore, the transition between self-rectifying mode and diode mode can be achieved by controlling the applied voltage, which is beneficial for 1D1R architecture. The study in this paper may offer a method for fabrication of oxide-RRAM based 3D crossbar array with good performances.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Resistive random access memory (RRAM) has drawn much attention as one of candidates for next-generation non-volatile memory owning to its excellent memory performances [1–4]. The most used structure for RRAM is mental-insulator-mental (MIM) sandwich stack, which is beneficial for ultra-high storage density. Various oxides such as SiO2 [5], ZnO [6], Ta2O5 [7], NiO [8], TiO2 [9], Nb2O5 [10], ZrO2 [11], and HfO2 [12] are studied as insulator materials and
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https://doi.org/10.1007/s10854-020-04521-1
show good performance in RRAM devices. For oxidebased RRAM the resistive switching process is related to the formation and rupture of conducting filaments (CFs) formed by oxygen vacancies, which can be significantly affected by electrode materials. Recently, electrode effects are extensively studied. RRAM performance including thermal stability (TiN/Ti/TiN, TiN/Ti) [13, 14], formation of CFs (Ti, Ag) [15], endurance (IrOx) [16], transition from selector to RRAM (V) [17], digital-to-analog resistive switching (Al) [18] can be modulated by selecting
J Mater Sci: Mater Electron
proper electrodes. Among them, metal electrode with good oxygen reservoir’s ability is of great use, since it can control the distribution of moveable oxygen vacancies. Till now, a few of electrode materials such as TiN [19], Ta [20] have been widely used as oxygen reservoir and other metal electrodes with this ability are remained to be discovered. Moreover, in threedimensional (3D) architecture crossbar array, undesir
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