Investigation of Novel Te precursor ( i -C 3 H 7 ) 2 Te for MoTe 2 Fabrication
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MRS Advances © 2018 Materials Research Society DOI: 10.1557/adv.2018.126
Investigation of Novel Te precursor (i-C3H7)2Te for MoTe2 Fabrication Y. Hibino1, S. Ishihara1,4, N. Sawamoto1, T. Ohashi2, K. Matsuura2,
H. Machida3, M. Ishikawa3, H. Sudo3, H. Wakabayashi2, and A. Ogura1 1
Meiji University, Kanagawa 214-8571, Japan
2
Tokyo Institute of Technology, Kanagawa 226-8502, Japan
3
Gas-Phase Growth Ltd., Tokyo 184-0012, Japan
4
Research Fellow of the Japan Society for the Promotion of Science, Tokyo 102-0083, Japan
ABSTRACT
We report the investigation on the properties of a novel Te precursor (i-C3H7)2Te and its effectiveness in fabricating MoTe2. The vapor pressure of the precursor was obtained by measuring the pressure as a function of its temperature in a sealed chamber. As a result it showed a high vapor pressure of 552.1 Pa at room temperature. The decomposition of the precursor was also investigated using DFT calculation. It was shown that the most likely reaction during the course of the decomposition of (i-C3H7)2Te is (i-C3H7)2Te → H2Te + 2 C3H7. The effectiveness of the precursor on the fabrication of MoTe2 was also investigated. Sputter-deposited MoO3 was tellurized in a quartz-tube furnace at the temperature up to 440°C. The resulting film showed that the 80% of the original MoO3 was tellurized to form MoTe2. It was also shown that further optimization of tellurization is required in order to prevent formation of metal Mo and elemental Te.
IINTRODUCTION Recently, transition metal dichalcogenides (TMDs) are gathering more and more attention due to its unique physical properties and high expectations for the applications [1-6]. Among TMDs, MoTe2 is drawing particular attention since it shows properties that contrasts with other TMD materials. Such properties include one of the lowest bandgap values in TMDs [7-8] and a phase shift from 2H structure to 1T’ structure and vice versa with various treatments [9-10], and so on. However, as research in MoTe2 and other TMD materials grows, there is a rising demand for high quality films. Presently, there are several methods to fabricate MoTe2, or TMD thin films [1116]. Exfoliation techniques are used to provide high quality thin films, but difficulties
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such as reproducibility and large-area productivity need to be overcome. Bottom-up methods such as sputtering and CVD are also employed to fabricate TMD thin films. Several studies on the of MoTe2 fabrication using H2Te or powder Te have been reported [9, 17-18]. Here in this study, we proposed the use of novel organic Te precursor, (iC3H7)2Te. We have so far shown the effectiveness of organic precursor in fabrication of MoS2 [15-16]. In addition, this Te precursor is stable in air and also shows no toxicity which makes it much safer to use than H2Te. The precursor
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