Investigation of precursors concentration in spray solution on the optoelectronic properties of CuInSe 2 thin films depo
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Investigation of precursors concentration in spray solution on the optoelectronic properties of CuInSe2 thin films deposited by spray pyrolysis method Maryam Hashemi1, Seyed Mohammad Bagher Ghorashi1,* Nima Taghavinia3,*
, Fariba Tajabadi2,*, and
1
Department of Laser and Photonics, University of Kashan, Kashan, POBOX 873175-3153, Iran Department of Nanotechnology and Advanced Materials, Materials and Energy Research Center, Karaj, POBOX 31787-316, Iran 3 Department of Physics, Sharif University of Technology, Tehran, POBOX 11155-9161, Iran 2
Received: 16 July 2020
ABSTRACT
Accepted: 29 September 2020
Copper indium selenide CuInSe2(CISe) thin films were deposited by chemical spray pyrolysis (CSP) method of CuInS2(CIS) and subsequent selenization process. To study the effects of solution concentration, we prepared different precursors solution of CIS including different amount of indium salts from 0.025 to 0.100 M with In/Cu 1.25 and S/In 4. These results propose that solution concentration is critical for inflecting the morphological, optical, electrical, and electrochemical characteristics of solution-processed CISe films and device performance. The studied morphological properties of deposited samples were homogenous, crack-free with large grains in indium salt concentrations more than 0.075 M. The deposited film thickness depends on the spray precursor concentration and increases for higher concentration. In addition with increasing of indium precursor concentration from 0.025 to 0.100 M in spray solution, the optical bandgap of deposited film decreases from 1.40 to 1.35 eV. Also the films mobility and carrier density were notably influenced by any change in the solution concentration. Electrical and electrochemical properties showed a decrease in carrier density from * 1020 to * 1017 cm-3 and the increase in mobility of order * 10–7 to * 10–2 cm2/Vs, respectively, for 0.025 M, 0.100 M CISe films. All films exhibited p-type conductivity owing to different concentrations. However, it seems that the concentration of the ideal solution is 0.100 molars.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
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https://doi.org/10.1007/s10854-020-04570-6
J Mater Sci: Mater Electron
1 Introduction Copper indium diselenide thin films are very desirable materials for a wide variety of technological applications such as hole transport materials [1], high-density optical data storage or semiconductors [2, 3], optoelectronic devices, solar cells [4, 5], water splitting [6], solar-hydrogen production [7], photoelectron chemical applications such as photoelectrolysis of water [8], photocatalyst [9], etc., due to their structural, optical, and electrical properties. Among these features, we can mention properties such as direct tunable and low bulk bandgap (Eg= 1.0–1.8 eV), high absorption coefficient, and high stability [10, 11]. There are two principal approaches for CISe films fabrication viz. va
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