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ION BEAM INDUCED INTERMIXING OF WSi0 .45 on GaAs S. J. PEARTON+, K. T. SHORT+, K. S. JONES*, A. G. BACA++ and C. S. Wu** + AT&T Bell Laboratories, Murray Hill, NJ 07974 * University of Florida, Gainesville, FL 32611 ++ AT&T Bell Laboratories, Reading, PA 19603 ** Hughes Aircraft Co., Torrance CA 90509

ABSTRACT The systematics of ion beam induced intermixing of WSio. 45 on GaAs have been studied after 2 through-implantation of Si or 0 in the dose range 1013 - 5 x 1016 cm- . SIMS profiling shows significant knock-on of Si and W into the GaAs at the high dose range in accordance with Monte Carlo simulations, but there is virtually no electrical activation (0

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