Ion Beam Machining
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Ion Beam Machining Fengzhou Fang1,2 and Zong Wei Xu3 1 State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin, China 2 Centre of MicroNano Manufacturing Technology (MNMT-Dublin), University College Dublin, Dublin, Ireland 3 College of Precision Instrument and OptoElectronic Engineering, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin, China
energetic collision cascade, the ion beam removed or sputtered atoms from the workpiece by transferring sufficient ions’ energy and momentum to target atoms, and parts of the ions will finally implant into the substrate after losing energy (Machine Tool 2016; https://en.wikipedia.org/ wiki/Ion_beam). IBM usually can be functional classified to ion sputtering/etching (remove material), ion sputter coating/ion-induced deposition (add material), and ion implantation (implant modification) (https://en.wikipedia.org/wiki/Ion_ beam; Hellborg et al. 2009; Fang and Xu 2015).
General Principle Synonyms Focused ion beam; Ion beam etching; Ion beam figuring; Ion beam smoothing; Ion beam sputtering; Ion bombardment; Ion implantation; Sputter deposition
Definition Ion beam machining (IBM) is an important nonconventional manufacturing technology used in micro-/nanofabrication, using a stream of accelerated ions by electrical means in a vacuum chamber to remove, add, or modify the atoms on the surface of the object. Mainly resulting from the
In general, ion beam machining equipment consists of ion source, accelerator by which the ions electrostatically accelerated to a desired energy, vacuum chamber, and target to be machined. Figure 1 illustrates the typical ion beam implantation or deposition setup (https://en.wikipedia.org/ wiki/Ion_implantation). In order to explain the damages caused by energetic ions to a solid target, the basic terms are introduced firstly (Ziegler 2004). Displacement Energy (Edisp) is the minimum energy required to hit a target atom away from its lattice site far enough without immediately return. Lattice Binding Energy (Elatt) is the minimum energy required to break electronic bonds and remove an atom from its lattice site. For the term of Surface
# CIRP 2018 The International Academy for Production Engineering et al. (eds.), CIRP Encyclopedia of Production Engineering, https://doi.org/10.1007/978-3-642-35950-7_6485-4
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Ion Beam Machining, Fig. 1 Schematics of ion implantation or deposition setup with mass separator (https://en. wikipedia.org/wiki/Ion_implantation). Ion energy approaching to the substrate can be adjusted by Uaccell and Udecell
Binding Energy (Esurf), as an atom at the surface of target is not confined from one side, the energy required to remove it from its lattice site will be less than the one inside the solid surrounded by other atoms. Esurf is very important for the ion sputtering (removal of target atoms). The calculation of kinetics of ion and recoiling atom has to end at some minimum energy. Final Energy (Efinal) of a moving atom
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