Ion Beam Synthesis Based Formation of Ge - Rich Thermally Grown Silicon Dioxide Layers: A Promising Approach for A Silic
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ION BEAM SYNTHESIS BASED FORMATION OF Ge – RICH THERMALLY GROWN SILICON DIOXIDE LAYERS: A PROMISING APPROACH FOR A SILICON - BASED LIGHT EMITTER T.Gebel1,2, L.Rebohle1,2, J. Zhao1, D. Borchert3, H. Fröb4, J.v.Borany1 and W.Skorupa1,2 Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany 2 nanoparc GmbH, Bautzner Landstraße 45, D-01454 Dresden - Rossendorf, Germany 3 Fraunhofer Institut für Solare Energiesysteme, D-45884 Gelsenkirchen, Germany 4 TU Dresden, Institut für Angewandte Photophysik, D-01062 Dresden, Germany
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corresponding author: [email protected] Abstract: The development of novel devices for optical communication and integrated sensor applications is mainly focused on their possible integration into dedicated integrated circuits. The main problem concerning integrated optical systems in silicon technology has always been the formation of an highly efficient silicon-based light emitter which is a key feature to make a real step into the world of integrated optoelectronics. One of the most promising approaches to form such a silicon based light emitter is ion beam synthesis. In this paper we will report our recent progress in extracting blue-violet (~400 nm) electroluminescence (EL) from an ion beam synthesized Ge-rich silicon dioxide layer. The power efficiency of the EL was as high as 0.5 % which is one of the best values ever reported for Si - based light emission. The lifetime of the EL-device can reach several hours without special precautions of stabilizing the EL-active layer against ion or other contamination. Moreover, results are reported dedicated to the investigation of the excitation mechanism of this strong EL. Introduction: Due to the dramatic efforts in modern communication technology many worldwide activities are focused on novel applications for data transmission. Optical data transfer is the most promising tool to overcome the bottleneck of communication in interchip and intrachip modes [1]. Furthermore the increasing market for integrated optical sensor systems and multi-functional microsystems will also cause a great demand on miniaturized and integrated optical systems. A lot of progress has been made in the last decade in developing new technologies for light emitting devices based on compound semiconductor materials like GaAs, GaN etc. or polymers. Today compound semiconductor materials are used as discrete devices in optoelectronics. However, since silicon is and remains the key material for all common microelectronic devices one is strongly interested in finding solutions for the integration of devices for the emission, modulation and detection of optical signals on one and the same chip, using the current Si technology. Because of its indirect bandgap silicon seems not to fulfill the requirements for the application as a light emitter. However, with the beginning of the 90’ies semiconductor nanostructures in F18.1.1
SiO2 attracted more and more attention because of their potential to overcome the disad
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