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ISOELECTRONIC TRAP LIKE LUMINESCENCE CENTERS OF InGaN H. KANIE, H. KOAMI, T. KAWANO, and T. TOTSUKA Applied Electronics Dept., Science University of Tokyo, Chiba, 278 Japan [email protected] ABSTRACT This paper describes the characteristics of the luminescence centers observed in the various photoluminescence (PL) and photoluminescence excitation (PLE) spectra of hexagonal In.Gal.xN microcrystals, synthesized by the nitridation of sulfide in the In concentration range of 2%

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