Large-Area Deposition of GaAs by MOCVD
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LARGE-AREA DEPOSITION OF GaAs BY MOCVD
JAMES T. DALY and CARSON B. ROBERTS Spire Corporation, Patriots Park, Bedford, MA 01730 ABSTRACT A new, large-scale, barrel-type MOCVD reactor which is capable of producing seven 3-inch wafers or fourteen 2-inch wafers at a time has been developed. Experiments and computer modelling studies of this geometry have been performed. The physical and electronic properties of n-type GaAs as a function of growth conditions are presented. Through the use of experimental design methods, the growth process has been optimized to yield highly uniform growth rates. The demonstrated uniformity supports the use of this reactor for production environments requiring 3-inch wafers. INTRODUCTION In recent years, Metal Organic Chemical Vapor Deposition (MOCVD) has been established as a viable method for the production of high quality III-V epitaxial materials. Photovoltaic, microwave, and optoelectronic devices are all currently being commercially produced by this method. However, at pressent high quality material with good uniformity (
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