Lasing of Injection Microdisks with InAs/InGaAs/GaAs Quantum Dots Transferred to Silicon
- PDF / 1,405,045 Bytes
- 4 Pages / 612 x 792 pts (letter) Page_size
- 101 Downloads / 182 Views
of Injection Microdisks with InAs/InGaAs/GaAs Quantum Dots Transferred to Silicon A. E. Zhukova*, E. I. Moiseeva, A. M. Nadtochiia, A. S. Dragunovaa, N. V. Kryzhanovskayaa, M. M. Kulaginab, A. M. Mozharovc, S. A. Kadinskayac, O. I. Simchukc, F. I. Zubovc, and M. V. Maximovc a
St. Petersburg Branch, National Research University “Higher School of Economics,” St. Petersburg, 190008 Russia b Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia c St. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, 194021 Russia *e-mail: [email protected] Received April 24, 2020; revised May 6, 2020; accepted May 6, 2020
Abstract—AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots have been transferred to the surface of a silicon wafer using an indium solder. The microlasers have a common electric contact deposited on top of the residual n+-GaAs substrate and individual addressing is ensured by placing the microdisks with the p contact down onto separate contact pads formed on silicon. No effect of a non-native substrate on the electrical, threshold, thermal, and spectral characteristics has been established. The microdisks can operate in continuous-wave regime without forced cooling at a threshold current density of ~0.7 kA/cm2. The lasing wavelength is stable (
Data Loading...
