Lead-free (K,Na)NbO 3 Thick Films for Flexible Non-volatile Memory Applications
- PDF / 491,678 Bytes
- 4 Pages / 595.22 x 842 pts (A4) Page_size
- 44 Downloads / 219 Views
Lead-free (K,Na)NbO3 Thick Films for Flexible Non-volatile Memory Applications Yeong Min Kwak, Tae Kwon Lee, Dae Sol Kong, Young Joon Ko, Dong Geun Jeong and Jong Hoon Jung∗ Department of Physics, Inha University, Incheon 22212, Korea (Received 18 September 2020; revised 13 October 2020; accepted 14 October 2020) We report the sol-gel fabrication and electrical characterization of flexible (K,Na)NbO3 (KNN) thick films. Muscovite mica allows the growth of high-quality polycrystalline KNN thick films with flexible functionality. Because of the trade-off between increase of grain-size and volatilization of alkaline ions, the electrical polarization is optimized at certain temperature of 720 ◦ C. The remnant and saturation polarization of flexible KNN films were recorded to Pr = 10.3 μC/cm2 and Ps = 23.3 μC/cm2 , respectively, which are quite close to those of rigid films with the same chemical compositions. The KNN thick films are bendable even up to bending radius of R = 3.1 mm, and the Pr and Ps at bending states are almost the same as compared to those at unbending state. Even in the convex and concave bending, the KNN thick films show excellent non-volatile memory characteristics. The Pr is almost the same even after the 108 times of switching and the 104 sec of retention. Keywords: Lead-free, (K,Na)NbO3 , Flexible memory, Fatigue, Retention DOI: 10.3938/jkps.77.780
I. INTRODUCTION
Ferroelectric films have played significant roles in modern electronic devices because of their inherently large dielectric, piezoelectric, and pyroelectric coefficients than other materials [1]. Especially, the ferroelectric films can enhance their physical property through an epitaxial strain from the substrate [2], and have been widely utilized in various devices including field-effect transistors [3], robots [4], and infrared cameras [5]. In the forthcoming Internet of Things (IoT) era, many electronic devices are forced to have flexibility and ecofriendliness in addition to their own functionality [6]. In order to meet such requirements, there have been a lot of efforts to fabricate flexible ferroelectric films with highcrystalline quality during recent several years. For example, Yu et al., fabricated flexible (Hf,Zr)O2 films on a polyimide substrate by atomic layer deposition and reported an excellent ferroelectric field-effect transistor performance [7]. Ko et al., fabricated flexile Pb(Zr,Ti)O3 films on a Ni-Cr foil by sol-gel method and reported a hybrid piezoelectric-pyroelectric nanogenerator application at harsh environmental conditions [8]. In contrast to amorphous polymer and polycrystalline metal-foil substrate, Jiang et al., fabricated flexible Pb(Zr,Ti)O3 films on a single crystalline mica substrate by a pulsed laser deposition [9]. They reported that mechanical stability ∗ E-mail:
[email protected]
pISSN:0374-4884/eISSN:1976-8524
of mica substrate enabled the robust operation of nonvolatile electronic devices in bent states. In this brief report, we have investigated the flexible and ecofriendly non-volatile memory application of a lead-free (K
Data Loading...
Recommend Documents
Theoretical Characterization of a Nanocrystal Layer for Nonvolatile Memory Applications
221 93 205KB
Synthesis of Nickel Disilicide Nanocrystal Monolayers for Nonvolatile Memory Applications
184 68 2MB
