Localized 56 Fe + ion implantation of TiO 2 using anodic porous alumina
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1181-DD01-04
Localized 56Fe+ ion implantation of TiO2 using anodic porous alumina J. Jensen1, R. Sanz2, M. Jaafar2, M. Hernández-Vélez2,3, A. Asenjo2, A. Hallén4, M. Vázquez1 1
Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping, Sweden. Instituto de Ciencia de Materiales de Madrid, CSIC, 28043 Madrid, Spain. 3 Applied Physics Department, Universidad Autónoma de Madrid, 28043 Madrid, Spain. 4 ICT-MAP, Royal Institute of Technology, SE-164 40 Stockholm, Sweden. 2
ABSTRACT We present result following localized ion implantation of rutile titanium dioxide (TiO2) using anodic porous alumina as a mask. The implantation were performed with 100 keV 56Fe+ ions using a fluence of 1.3·1016 ions/cm2. The surface modifications where studied by means of SEM, AFM/MFM and XRD. A well-defined hexagonal pattern of modified material in the near surface structure is observed. Local examination of the implanted areas revealed no clear magnetic signal. However, a variation in mechanical and electrostatic behavior between implanted and non-implanted zones is inferred from the variation in AFM signals. INTRODUCTION Regular nano- and micro-patterns have potential technological application in e.g. data storage, biological sensors or photonic crystals. Ion implantation is an ideal instrument to modify material properties in a controlled way [1], and very suitable for fabrication and tailoring of functional properties such as optical/magnetic patterns, nanoporous material and catalyst surfaces. An important issue is to control the specific implantation areas. The spatial controls of areas where the material changes take place are fundamental in order to develop functional devices or study collective responses. One way of creating regular structures, or an array of modulated physical properties, is with focused ion beam implantation (FIB). However, since currently only a few ion sources and restricted energies are available, the application of this method is limited. Another method is using ion beam-based projection methods, where the ion impact is restricted by a mask or template, enabling a parallel formation of well-ordered and localized material modification yielding structures with well-defined features and interesting material properties [2-4]. A special type of implantation mask, which within the last few years has received much attention, is anodic porous alumina membranes, which contain self-ordered nanopores. Until now only few studies have been performed with this mask for ion beam nanolithography using keV ions [5,6,7]. Titanium dioxide (TiO2) is a particularly versatile material with extensive technological application. Implanting this material with ferromagnetic ions makes it possible to obtain a diluted magnetic semiconductor [8], to be applied in future spintronics devices. Here one wants to avoid the clustering of doped species. However, for other application like magnetooptics, magnetotransport, and nanomagnetism the system must be composed of nanoclusters dispersed in a semiconductor or dielectric ma
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