Low Temperature, Digital Control, Fast Synthesis of 2-D BNNSs and Their Application for Deep UV Detectors
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Low Temperature, Digital Control, Fast Synthesis of 2-D BNNSs and Their Application for Deep UV Detectors Ali Aldalbahi1*, Renyauan Yang2*, Eric Yiming Li2*, Muhammad Sajjad2, Yihau Chen3. Peter Feng2** 1 Department of Chemistry, Collage of Science, King Saud University, Riyadh 11451, Saudi Arabia, 2Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, PR/USA 00936, 3Shanghai Dian Ji University, Shanghai, China
*Equally Contributing Authors. ** Author to whom correspondence should be addressed; E-Mail: [email protected]; Tel.: +1-787-764-2626; Fax: +1-787-764-4063. ABSTRACT This paper reports low temperature, digital control, fast synthesis of high-quality boron nitride nanosheets (BNNSs) and their electronic device application. Raman scattering spectroscopy, X-ray diffraction (XRD), Transmission electron microscopy (TEM) are used to characterize the BNNSs. With the synthesized various BNNSs, two prototypic types of deep UV photodetectors have been fabricated, and sensitivity, response and recovery times, as well as repeatability have been characterized. Effects of period and thickness of BNNSs on the properties of prototypic photodetectors are also discussed. INTRODUCTION With the concerns of the economic feasibility and often-rough environmental conditions, the studies on deep UV sensors have been focused on long-term stability, miniature size, high sensitivity and fast response rate.[1] Many wide bandgap semiconductors with good electronic and optical properties, such as aluminum gallium nitride (AlGaN) and gallium nitride (GaN),[2] zinc oxide (ZnO),[3] and diamond,[1,4] have been explored and used, and many excellent results have been achieved and published in different journals. Recent advances in high-quality born nitride thin film and 2-dimensional (2-D) sheet material growth have resulted in significant progress in developing BN based electronic device.[5-10] In fact, boron nitride (BN) appears to be an ideal material for the development of deep ultraviolet (DUV) detectors because it possesses very wide direct energy bandgap width up to 5.2-6.2 eV and offers the ability for multifunctional nanostructures that enable novel device applications. The examples include external stimuli-induced multiple-phenomena involving the strong coupling of the mechanical, electrical and optical properties of layered nanomaterial such as asymmetrical straininduced piezoresistivity effect,[11] surface functionalization-induced tunable bandgap structure,[12,13] and nanostructure related quantum tunneling effects,[14,15] etc. Our recent experiments have clearly indicated that the thickness variation of boron nitride nanosheets from few micrometer to few nanometer in thickness would result in
significant change of material’s electrical, electronic and optical properties.[16] 2-D atomic-thin BNNS research has brought a new revolution in multifunctional materials science due to its many charming, unusual properties[17,18] such as high thermal conductivity, and good transparency ranging from vis
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