Low-temperature ZrO 2 thin films obtained by polymeric route for electronic applications
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Low-temperature ZrO2 thin films obtained by polymeric route for electronic applications Miguel H. Boratto1 · João V. M. Lima1,2 · Luis V. A. Scalvi1,2 · Carlos F. O. Graeff1,2 Received: 8 June 2020 / Revised: 31 July 2020 / Accepted: 3 August 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In this work, zirconium oxide (ZrO2) films obtained by the polymer-assisted chemical solution method were evaluated. Thin films are obtained using dip-coating with dipping rates from 1 to 100 mm/min, and annealing temperatures from 150 to 450 °C. The films present amorphous structure even with annealing at 450 °C, bandgap of 5.4 eV and a non-porous surface. The zirconia films were electrically characterized applied to a metal–insulator–metal capacitor (MIM-c) configuration. The dielectric layer presents high capacitance and impedance, highly dependent on the dipping rates and annealing temperature. The outcomes from the MIM-c investigated demonstrate that this low-temperature zirconia film may be an alternative for application in flexible electronic devices as insulating layer. More interesting results like higher capacitance and higher operation frequencies are obtained for zirconia layers obtained at 350 °C due to better dipole formation in the film enhanced by the thinner films and a better elimination of polymeric ligands in the film.
1 Introduction Zirconium oxide (ZrO2), also known as zirconia, is an important ceramic material with broad technological applicability, such as reflective mirrors, interference filters, and electronic and optoelectronic devices [1–4]. In addition, along with hafnium oxide (HfO2), amorphous zirconia (a-ZrO2) has been considered for years to replace silicon oxide (SiO2) in electronic devices because of its appropriate physical and electrical properties and suitability to use in transistors [5]. Among its interesting characteristics, Z rO2 has excellent optical properties, such as high refractive index, wide bandgap and high transparency in the visible and near infrared [6]. In the form of thin film, zirconia can be found in Electronic supplementary material The online version of this article (doi:https://doi.org/10.1007/s10854-020-04171-3) contains supplementary material, which is available to authorized users. * Miguel H. Boratto [email protected] 1
School of Sciences, Department of Physics, São Paulo State University (Unesp), Bauru, SP 17033‑360, Brazil
School of Sciences, POSMAT ‑ Post‑Graduate Program in Materials Science and Technology, São Paulo State University (Unesp), 17033‑360 Bauru, SP, Brazil
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three crystalline structures, depending on its temperature and atmospheric pressure. Its properties are strongly related to its crystalline structure. The monoclinic phase is found from room temperature to 1175 °C, the tetragonal phase from 1175 to 2370 °C and the cubic phase from 2370 to 2750 °C [7]. The dielectric constant of Z rO2 films range from k = 20 in the monoclinic phase to k = 37–47 for the cubic and tetragonal phases
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