Luminescence behavior of silicon and carbon nanoparticles dispersed in low-polar liquids
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NANO EXPRESS
Open Access
Luminescence behavior of silicon and carbon nanoparticles dispersed in low-polar liquids Yury V Ryabchikov1,2*, Sergei A Alekseev3, Vladimir V Lysenko1, Georges Bremond1 and Jean-Marie Bluet1
Abstract A comparative photoluminescence analysis of as-prepared and chemically modified (by alkyl chains -C18H37) silicon and carbon nanoparticles dispersed in low-polar liquids is reported. Influence of the low-polar liquid nature and ambient temperature on photoluminescence of the nanoparticles has been investigated from the point of view of their possible application as thermal nanoprobes. Keywords: Silicon nanoparticles, Carbon nanoparticles, Photoluminescence, Chemical modification, Alkyl groups, Low-polar liquids, Temperature dependence
Background Low-dimensional structures present considerable interest for researchers because of their new and unique optical and electronic properties in comparison with bulk materials. For example, various nanoparticles (NPs) are involved in different applications such as electronics [1], photovoltaic [2], biology [3], liquid crystals [4] etc. Photoluminescence (PL) is one of the important phenomena taking place in semiconductor NPs. It is very sensitive to various experimental conditions, such as molecular ambient environment, temperature, pressure, and so on. In particular, thermally induced PL effects are of special interest for temperature probing at nanoscale in various media. For example, different materials are reported to be used as thermal-sensitive nanoprobes [5] and nanothermometers [6]. A comparative analysis of the influence of high- and low-polar liquids (LPLs) on PL of Si NPs has already been reported [7]. The low-polar liquids were reported to be used instead of the high-polar liquids in order to prevent PL quenching of the NPs. However, stable colloidal solutions of the as-prepared Si NPs could not be obtained in LPLs because of their oleophobic surface. * Correspondence: [email protected] 1 Institut des Nanotechnologies de Lyon (INL), UMR-5270, CNRS, Université de Lyon, INSA de Lyon, bat. Blaise Pascal, 7 av. Jean Capelle, Bat. Blaise Pascal, Villeurbanne F-69621, France 2 PN Lebedev Physical Institute of Russian Academy of Sciences, 53 Leninskii Prospekt, Moscow 199991, Russia Full list of author information is available at the end of the article
Thus, surface chemical modification of the NPs by different alkyl groups can be the simplest way to overcome this problem [8]. In this work, we have studied the influence of LPLs, ambient temperature, and continuous laser irradiation on PL behavior of Si and C NPs in view of their temperature-sensing applications.
Methods Chemical anodic etching of p-type 10-Ωcm (100)oriented Si wafer has been used for the preparation of nano-Si powder. Silicon substrate was etched in a solution containing 1:1 volume mixture of HF (48%) and anhydrous ethanol. Anodic current density was 45 mA/ cm2, and etching time is 50 min. A permanent stirring of the etching solution was applied in order to evacuate
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