Mechanism of the Adhesive Interaction of Diazoquinone-Novolac Photoresist Films with Monocrystalline Silicon
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Journal of Applied Spectroscopy, Vol. 87, No. 4, September, 2020 (Russian Original Vol. 87, No. 4, July–August, 2020)
MECHANISM OF THE ADHESIVE INTERACTION OF DIAZOQUINONE-NOVOLAC PHOTORESIST FILMS WITH MONOCRYSTALLINE SILICON S. D. Brinkevich,a* E. V. Grinyuk,a D. I. Brinkevich,a R. L. Sverdlov,a V. S. Prosolovich,a and A. N. Pyatlitskib
UDC 535.3;548.0
Fourier-transform infra-red spectroscopy with frustrated total internal reflection was used to study radiationinduced processes upon the implantation of boron and phosphorus ions into positive FP9120 diazoquinone-novolac photoresist films on silicon. Strengthening of the photoresist adhesion to monocrystalline silicon was found to be caused by the formation of ester linkages between hydroxyl groups on the surface of the silicon wafer oxide layer and carboxyl groups of 1-H-indene-3-carboxylic acid. Keywords: frustrated total internal reflection spectrum, diazoquinone-novolac photoresist, implantation, adhesion, silicon. Introduction. One of the most promising methods for controlling the electrophysical, strength, and biological properties of polymer surface layers is ion implantation [1, 2]. In recent years, interest has arisen in the study of processes in polymer materials induced by ion irradiation due to the urgent need to develop new materials for use in areas such as space technology and medicine [1, 3]. Ion implantation is also commonly used in modern electronics, permitting precise control of trace alloying elements. This is a general and versatile method. Silicon serves as the major material for the preparation of semiconductor devices. Diazoquinone-novolac (DQN) resists are composites of light-sensitive O-naphthoquinone diazide and phenolformaldehyde resin, which play an important role in submicron and nanolithography processes in the construction of various instruments [4]. The interaction of DQN resists with UV, x-ray, and visible radiation has been studied in rather considerable detail, while processes induced by ion radiation have not been sufficiently investigated although they can have a significant effect on the quality of the manufactured devices [4–7]. In previous works [8–10], we have shown that upon the ion implantation of polymers, radiation-induced processes occur not only in the region of the ion path length but also beyond it. In particular, we found that the implantation of B+ and P+ ions leads to strengthening of the adhesion interaction of the DQN-resist film with silicon [10]. However, the mechanism of the radiation-induced processes responsible for change in the adhesion properties of DQN resists to silicon has not been established. Fourier-transform IR (FT-IR) spectroscopy with frustrated total internal reflection is commonly used to study thin films and permits us to obtain quantitative information on the composition and structure of complex organic molecules and their mixtures in the solid aggregate state [11]. There have not yet been any FT-IR studies of DQN-photoresist films on the surface of ion-irradiated monocrystalline silico
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