Memristor BJT pair based low complex circuits for portable electronics
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Memristor BJT pair based low complex circuits for portable electronics P Michael Preetam Raj1 • Arvind Subramaniam1 • Souvik Kundu1 Received: 19 January 2020 / Revised: 7 August 2020 / Accepted: 8 September 2020 Ó Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Circuits consisting of both memristor and bipolar junction transistor (BJT) were found to be extremely beneficial as the current driven by the transistor enhanced the memristive performances. In this work, memristor-BJT pair was considered and its electronic characteristics were investigated. The pair demonstrated the features of tunable current regulator with reduced circuit complexity. Importantly, the duo exhibited stable characteristics for a large range of frequency variations. Interestingly, the ameliorated linearity was obtained in the memristance-time characteristics. Most importantly, variable negative resistance (VNR) was achieved by modulating the current through the couple. This property was employed in solving linear equations that possess negative slope. In addition, VNR was utilized to implement a low circuit complexity based pulse signal generator with tunable amplitude and on duration. The abovementioned results were obtained through simulation and fabrication routes. The ideas proposed in this work pave the way for futuristic highly reliable oscillators and logic control circuits with reduced on-chip area for portable electronic systems. Keywords Memristor BJT Current regulator Variable negative resistance Pulse signal generator Portable electronics
1 Introduction Memristor the fourth basic electronic circuital element was first theoretically proposed by Leon Chua in 1971 [1]. Eventually realized at Hewlett-Packard labs in 2008 [2], it has been an intrigued alternative to conventional electronic devices [3–5]. Importantly, memristive systems have demonstrated improvements in terms of on-chip area (* 42%), power consumption (100 times) and latency (within 1 ns) when compared to the widely used transistor based systems [5–8]. In this regard, recently there have been numerous research interests to develop novel memristive circuits and systems [8–14]. Owing to its compatibility with the popular complementary metal oxide semiconductor (CMOS) fabrication process, prior studies have documented integration of memristors with CMOS devices [15–17]. However, the existing memristive circuits suffer with the drawback associated with nonlinear device & Souvik Kundu [email protected]; [email protected] 1
Department of Electrical & Electronics Engineering, Birla Institute of Technology and Science (BITS) Pilani, Hyderabad Campus, Hyderabad 500078, India
characteristics, which ultimately results in erroneous memristive programming. In order to mitigate this issue, there is a need to explore novel memristor based nonlinearity compensation circuits. An important electronic circuit which maintains constant current (despite the fluctuations in voltage) is the current regulator [18]. Such a functi
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