• PDF / 202,910 Bytes
• 5 Pages / 414.72 x 648 pts Page_size
• 97 Downloads / 241 Views

DOWNLOAD

REPORT

ABSTRACT In this paper we report on the formation of ohmic contacts to n- AlxGa1 .xN alloys. The films were produced by plasma-assisted MBE and doped n- type with silicon at doping levels between 1018 to 1019 cm-3 . Contacts were formed by sequential deposition of 200 A of Ti and 2000 A of Al and the contact resistivities were determined from TLM measurements. For low Al- content (x

Recommend Documents

Raman Analysis of Al x Ga 1-x N Films

203 59 425KB

Bowing Parameter of Al x Ga 1-x N

193 57 254KB

Refractory Metal Contacts to N-Type InP and InGaAs

189 74 2MB

Characterization of Al x Ga 1-x N/ Al y Ga 1-y N Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Ep

224 72 513KB

Strain-Induced Effects on the Resonant Tunnelling of Holes in Zinc-Blende Al y Ga 1-y N/Al x Ga 1-x N/Al y Ga 1-y N Hete

167 62 81KB

High Resistivity Al x Ga 1-x N Layers Grown by MOCVD

184 75 76KB

MOVPE Growth and Structural Characterization of Al x Ga 1-x N

188 76 311KB

Raman study of Ga 1-x Al x N solid solutions

203 99 335KB

Electronic Properties of n-type Al X Ga 1-X As Alloys

203 92 162KB

Raman study of resonance effects in Ga 1-x Al x N solid solutions

181 50 227KB

Thermally Stable Schottky Contacts to n-GaN

207 34 336KB

Electrical and Optical Properties of 1 MeV-electron irradiated Al x Ga 1-x N

180 92 93KB