Metal-Dielectric Interfaces in Gigascale Electronics Thermal and Ele
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reli
- PDF / 6,694,706 Bytes
- 154 Pages / 439.37 x 666.142 pts Page_size
- 100 Downloads / 183 Views
Series Editors Robert Hull, Charlottesville, VA, USA Chennupati Jagadish, Canberra, ACT, Australia Richard M. Osgood, New York, NY, USA Jürgen Parisi, Oldenburg, Germany Zhiming M. Wang, Fayetteville, AR, USA
For further volumes: http://www.springer.com/series/856
The Springer Series in Materials Science covers the complete spectrum of materials physics, including fundamental principles, physical properties,materials theory and design. Recognizing the increasing importance ofmaterials science in future device technologies, the book titles in this series ref lect the state-of-the-art in understanding and controlling the structure and properties of all important classes of materials.
Ming He Toh-Ming Lu •
Metal-Dielectric Interfaces in Gigascale Electronics Thermal and Electrical Stability
123
Ming He Department of Physics Applied Physics and Astronomy, Rensselaer Polytechnic Institute 110, 8th Street Troy, NY 12180-3590 USA e-mail: [email protected]
ISSN 0933-033X ISBN 978-1-4614-1811-5 DOI 10.1007/978-1-4614-1812-2
Dr. Toh-Ming Lu Center for Integrated Electronics Rensselaer Polytechnic Institute 110, 8th Street, CII 6013 Troy, NY 12180-3590 USA e-mail: [email protected]
e-ISBN 978-1-4614-1812-2
Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2011941622 Ó Springer Science+Business Media, LLC 2012 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Preface
Microelectronic devices contain multiple layers of dissimilar materials, including metals, dielectrics, and semiconductors. When integrating these heterogeneous materials to create a device, the boundary that separates each pair of materials is called their interface. Examples are dielectric-semiconductor interfaces, metalsemiconductor interfaces, and metal-dielectric interfaces. As the device structures in gigascale electronics continue to shrink, their functionality is not only affected by the film quality of these dissimilar materials, but also is more and more determined by the stability of their interfaces. Interface stability has become an increasingly important issue that has a profound impact on the reliability of electronic devices during operation. For instance, the dielectric-semiconductor interface, such as the SiO2–Si interface, was intensely studi
Data Loading...
