Method of Fast Hydrogen Passivation to Solar Cell Made of Crystalline Silicon
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1123-P05-24
METHOD OF FAST HYDROGEN PASSIVATION TO SOLAR CELL MADE OF CRYSTALLINE SILICON Wen-Ching Sun1, Jian-Hong Lin1, Wei-Lun Chang1, Tien-Heng Huang 2,Chih-Wei Wang3, Jia-De Lin3, Chwung-Shan Kou3, Jian-You Lin4, Sheng-Wei Chen4, Jenn-Chang Hwang4, Jon-Yiew Gan4 1 Photovoltaics Technology Center Industrial, Technology Research Institute, Hsinchu, Taiwan Material and Chemical Research Laboratories Intranet, Technology Research Institute, Hsinchu, Taiwan 3 Department of Physics, National Tsing Hua University, Hsinchu, Taiwan 4 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
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ABSTRACTS Plasma immersion ion implantation (PIII) is a technique of material processing and surface modification, using controllable negative high voltage pulsed bias to attract the ion generated from the plasma. The method using PIII treatment quickly improves the performance of solar cell made of crystalline silicon, including monocrystalline, multicrystalline and polycrystalline silicon. Hydrogen ions are attracted and quickly implanted into solar cell under a predetermined negative pulse voltage, thus, the passivation of the crystal defects of the solar cell can be realized in a short period. Meanwhile, the properties of the antireflection layer can not be damaged as the proper operating conditions are used. Consequently, the series resistance can be significantly reduced and the filling factor increases as a result. Both the short-circuit and the open-circuit voltage can be increased. The efficiency can be enhanced.
INTRODUCTION Solar cell is a very promising clean energy source which can generate electricity directly from sunlight. However, the cost of the production of solar cells needs to be significantly reduced so as to be widely accepted as a major electricity source. It has been pointed out that the silicon wafer share is above one third of the total cost of a crystalline silicon solar cell module. Consequently, there are intensive researches on the development of solar cells based on multicrystalline silicon (mc-Si) or polycrystalline silicon. On the other hand, both mc-Si and poly-Si contain defects within the crystals, including grain boundaries, intragrain dislocations and precipitates. Those imperfections can degrade the conversion efficiency of solar cells. Besides, the recombination of charge carriers at the surface is detrimental to solar cells, even in the case of monocrystalline solar cells. Dangling bonds on the surface are the main trapping centers for the charge carriers. Impurities can be removed by gettering and defects can be passivated1 . Hydrogen atoms are believed to play a vital role in the deactivation of recombination centers. As a result, the efficiency of c-Si solar cells can be significantly improved. The general view has
been that these efficiency improvements are closely related to the reduction of the minority carrier recombination losses at surfaces, grain boundaries, dislocations and other defects in the crystal lattice. It is generally accepted t
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