Microstructural Evolution Of The Initial Phase Formation Of Cobalt Silicide With An Ultra-Thin Titanium Layer
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Microstructural Evolution Of The Initial Phase Formation Of Cobalt Silicide With An Ultra-Thin Titanium Layer Kevin D. Johnson, Kian Sin Sim1, Huicheng Chang, Julie Tsai, and Zhiyong Ma Intel Corporation, Hillsboro, OR, U.S.A. 1 Intel Corporation, Penang, Malaysia ABSTRACT Inserting a titanium layer between cobalt and silicon can control the phase formation sequence for cobalt silicide. In this study we show that sputtered Ti combines with surface oxide to form a stable permeable membrane 10nm) titanium layer alters cobalt silicide phase formation by controlling the concentration of diffusing species at the interlayer interfaces4. The Si-rich phase can then form even at low temperatures. For a titanium layer
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