Modeling and simulation of high-efficiency GaAs PIN solar cells
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Modeling and simulation of high‑efficiency GaAs PIN solar cells Ali Imran1 · Muhammad Sulaman2,3 · Yong Song2 · Deborah Eric2 · Muhammad Noaman Zahid2 · Muhammad Yousaf4 · Muhammad Imran Saleem3 · Maoyuan Li2 · Duo Li1 Received: 16 April 2020 / Accepted: 29 August 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. The effect of varying key parameters on the conversion efficiency is investigated. The simulations are performed using COMSOL Multiphysics software. The mobilities of electrons and holes are varied in combination with the lifetime (LT). As a result, a maximum efficiency of 10.81% is achieved by setting the electron and hole mobility to 1.5k cm2 V−1 s−1 and 0.3k cm2 V−1 s−1, respectively. The electron and hole carrier LT are 3 ns and 7 ns, respectively, for the maximum output. The effect of the surface recombination velocity (SRV) is also studied, and a maximum efficiency of 13.75% is achieved for an SRV of 1k ms−1 for electrons and holes. The results show that higher photovoltaic efficiencies can be achieved by increasing the mobility and carrier LT while decreasing the surface recombination velocities. Keywords Solar cell · Mobility · Lifetime · Recombination
1 Introduction The conversion of solar energy into electric energy is a remarkable renewable alternative for electricity generation [1]. Various other technologies have also been used to harvest energy from natural resources such as wind, water, and biofuels [2–5]. Among all of these, solar energy is the most promising alternative. The discovery of photovoltaic technology has provided a breakthrough in modern human life, being not only renewable but also clean and environmentally * Muhammad Sulaman [email protected] * Yong Song [email protected] 1
State Key Lab for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People’s Republic of China
2
Beijing Key Lab for Precision Optoelectronic Measurement Instrument and Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, People’s Republic of China
3
Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, People’s Republic of China
4
Department of Material Science and Engineering, Peking University, Beijing 100871, People’s Republic of China
friendly. Scientific communities around the globe have been working on increasing the associated efficiency and decreasing their cost for many decades. Solar cells (SCs) available on the commercial market are still made from silicon. Recently, group III–V compound semiconductors have been used in optoelectronics and SCs, achieving higher efficiencies compared with silicon SCs [6–10]. Among these compound semiconductors, GaAs is currently one of the most attractive candidates for use in photovoltaic applications due to its lower temperature coefficient
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