Fabrication and simulation of GaInAs Solar cells using compositionally step-graded AlGaInAs buffers on GaAs substrate
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Fabrication and simulation of GaInAs Solar cells using compositionally step‑graded AlGaInAs buffers on GaAs substrate Yang He1 · Wei Yan2 Received: 20 March 2020 / Accepted: 31 July 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In the direction of the industrial application of invert metamorphic GaInAs/AlGaInAs/ GaAs/GaInP quadruple junction solar cells, another 0.67 eV band gap lattice-mismatched GaInAs junction was added into the three-junction 1.8/1.4/1.0 eV solar cells. In this paper, we performed an investigation of a 0.67 eV-GaInAs solar cell on the compositionally stepgraded InP/AlGaInxAs/GaAs virtual substrate in order to identify the metamorphic buffers qualities after growing the solar cell. The transmission electron microscopy, X-ray diffraction and atomic force microscope were carried out to analyze material structure properties. The high surface roughness is observed and a region where a significant number of external dislocations are formed in the InGaAs tunnel junction of solar cells is identified. The I–V and EQE characterizations of metamorphic 0.67 eV InGaAs solar cell were measured under 1 sun AM1.5D conditions. To research the impact of threading dislocation densities on the InGaAs solar cell, the simulation results of I–V and EQE have also been discussed with Crosslight APSYS’s some applicable features. Keywords Ga0.48In0.52As · Solar cell · AlGaInAs metamorphic buffers · Simulation
1 Introduction III–V compound multi-junction solar cells designed and developed have attained much attention and are specifically used for space and highly concentrated terrestrial applications (Guter et al. 2011; Yoon et al. 2005). In comparison with single band gap or single junction, multi-junction by coupling materials with different band gaps is helpful in minimizing thermalization losses and increasing the photoelectric conversion efficiency (King et al. 2007). The highly advanced III–V solar cells using a 0.67 eV Ge bottom subcell in conjunction with the lattice matched 1.86 eV GaInP top cell and 1.36 eV InGaAs middle * Yang He [email protected] 1
School of Electronic Engineering, Changzhou College of Information Technology, No. 22 Middle Mingxin Road, Wujin District, Changzhou 213164, China
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Basic Courses Department, Changzhou College of Information Technology, No. 22 Middle Mingxin Road, Wujin District, Changzhou 213164, China
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subcell are formed on the Ge substrate(Roensch et al. 2011; King et al. 2003; Meusel et al. 2003). The triple-junction cell made of In0.49Ga0.51P (1.90 eV)/In0.01GaAs (1.4 eV)/Ge (0.67 eV) has reached record efficiencies up to 41.6% under concentrated sunlight illumination and is produced by several companies (Ermer et al. 2012). Although this kind of solar cell has been manufactured, the current mismatch exits between the subcells due to the Ge subcell absorbing approximately two times more low energy photons. Replacing the bottom Ge subcell with 1 eV band gap material c
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