• PDF / 307,518 Bytes
• 7 Pages / 420.48 x 639 pts Page_size
• 84 Downloads / 226 Views

DOWNLOAD

REPORT

MODIFICATIONS IN GAP STATE DISTRIBUTION UPON HIGH ENERGY ELECTRON BOMBARDMEN]i IN n TYPE HYDROGENATED AMORF

Recommend Documents

Hot-electron Phototransistors in Hydrogenated Amorphous Silicon

210 111 294KB

Characterization of Gap Defect States in Hydrogenated Amorphous Silicon Materials

185 48 185KB

Increased Conductivity in P-Type Hydrogenated Amorphous Silicon

137 4 105KB

Impurity State-Dangling Bond Pairs in Hydrogenated Amorphous Silicon

181 76 300KB

Effect of Contacts on Capacitance Transient Measurements in N-Type Hydrogenated Amorphous Silicon

172 116 363KB

Lattice Relaxation of Deep Defects in Light-Soaked N-Type Hydrogenated Amorphous Silicon

158 54 360KB

Ultrafast Carrier Thermalization in Hydrogenated Amorphous Silicon

186 2 90KB

1 / f Noise in Hydrogenated Amorphous Silicon

214 18 386KB

Impurity-Defect Complexes in Hydrogenated Amorphous Silicon

210 86 271KB

Photoinduced Expansion in Hydrogenated Amorphous Silicon

241 8 586KB

Photoinduced Structural Changes in Hydrogenated Amorphous Silicon

197 61 741KB

Frequency-Dependent Noise in Hydrogenated Amorphous Silicon

197 24 487KB