Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators
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MRS Advances © 2020 Materials Research Society DOI: 10.1557/adv.2020.202
Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators Celso I. Fornari1, Eduardo Abramof1, Paulo H. O. Rappl1, Stefan W. Kycia2, and Sérgio L. Morelhão3 1
National Institute for Space Research, São José dos Campos, SP, Brazil
2
Department of Physics, University of Guelph, Guelph, ON, Canada
3
Institute of Physics, University of São Paulo, São Paulo 05508-090, Brazil
ABSTRACT
Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth parameters have drastic effects on structural and electronic properties of the films. Recently [J. Phys. Chem. C 2019, 123, 24818−24825], a detailed investigation has been performed on the dynamics of defects in epitaxial films of this material, revealing the impact of film/substrate lattice misfit on the films’ lateral coherence. Very small lattice misfit (
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