Nano Crystalline Silicon Film Serves as the Emission Material for the Field Emission Pressure Sensor
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Nano crystalline silicon film serves as the emission material for the field emission pressure sensor Liao Bo Electronics Engineering Depart., Beijing Institute of Technology, Beijing, 100081,China. ABSTRACT
The prototype of a field-emission pressure sensor with a novel structure based on the quantum tunnel effect is designed and manufactured. Moreover the nano crystalline silicon film technology is introduced into the fabrication of the device effectively, which performs the function mostly as the field-emission material, the device field-emission characteristic of the nano silicon film is investigated, the experimental results show that the measured current density emitted from the effective area of the sensor can reach 53.5A /m2, when the exterior electric field is 5.6×105V/m.
INTRODUCTION
The field-emission pressure sensor is a newly sensor advanced in recent years [1-6]. Comparing with other types of sensors, e.g. piezoresistance and capacitance sensors, the vacuum electronic pressure sensor has some superior properties, including high sensitivity, good endurance at high and low temperature, radiation resistance and small volume. It could be applied in various civil and military engineering fields for measuring pressure, flow velocity, fluid height, acoustic wave intensity and so on. Especially, it can be used in the tactile system of intelligent robotics and in a severe operating environment. The focus research on the field-emission pressure sensor is to obtain the high sensitivity operated at the low voltage. Many efforts are concentrated on covering a layer of low work function material on the cathode to reduce the work function of the cathode. The most researches are on the diamond [7-8] and DLC films [9-10], and some other researches on carbides [11], metal silicides [12] and porous silicon material [13-14]. With the deep understands of the functions of the low dimension nano materials, and the draught of the development of their excellent characteristics, lately, the hot research is appearing on the study of the field-emission characteristics of the carbon nanotube [15-16] and silicon nanowires [17-18]. In this paper, the manufacture of a vacuum field-emission pressure sensor is presented. In order to overcome the shortages of the conventional silicon emitter cathode on fields of conductivity, thermal conductivity, thermal stability and emission reliability, the nano crystalline silicon film is
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introduced to serve as the emission cathode material and to improve the device cathode emission capability, considering its potential field-emission characteristics on fields of easy fabrication, high conductivity, stable structure, good oxidation resistance, good light and thermal stability, large specific surface area and so on.
DESIGN AND MANUFACTURE OF THE FIELD-EMISSION PRESSURE SENSOR
The field-emission pressure sensor is made up of the anode collector, cathode emitter array, sensible film receiving exterior pressure and the vacuum micro-chamber between the cathode and anode. The design p
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