Nanofriction characteristics of h-BN with electric field induced electrostatic interaction
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ISSN 2223-7690 CN 10-1237/TH
RESEARCH ARTICLE
Nanofriction characteristics of h-BN with electric field induced electrostatic interaction Kemeng YU1,2 , Kun ZOU1,* , Haojie LANG1, Yitian PENG1,2,3, 1
Shanghai Collaborative Innovation Center for High Performance Fiber Composites, Donghua University, Shanghai 201620, China
2
College of Mechanical Engineering, Donghua University, Shanghai 201620, China
3
Engineering Research Center of Advanced Textile Machinery, Donghua University, Shanghai 201620, China
Received: 19 January 2020 / Revised: 12 June 2020 / Accepted: 11 July 2020
© The author(s) 2020. Abstract: The nanofriction properties of hexagonal boron nitride (h-BN) are vital for its application as a substrate for graphene devices and solid lubricants in micro- and nano-electromechanical devices. In this work, the nanofriction characteristics of h-BN on Si/SiO2 substrates with a bias voltage are explored using a conductive atomic force microscopy (AFM) tip sliding on the h-BN surface under different substrate bias voltages. The results show that the nanofriction on h-BN increases with an increase in the applied bias difference (Vt–s) between the conductive tip and the substrate. The nanofriction under negative Vt–s is larger than that under positive Vt–s. The variation in nanofriction is relevant to the electrostatic interaction caused by the charging effect. The electrostatic force between opposite charges localized on the conductive tip and at the SiO2/Si interface increases with an increase in Vt–s. Owing to the characteristics of p-type silicon, a positive Vt–s will first cause depletion of majority carriers, which results in a difference of nanofriction under positive and negative Vt–s. Our findings provide an approach for manipulating the nanofriction of 2D insulating material surfaces through an applied electric field, and are helpful for designing a substrate for graphene devices. Keywords: nanofriction; electrostatic interaction; bias voltage; h-BN; atomic force microscopy
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Introduction
Electric fields play a critical role in substrate materials and interface lubricating materials. Graphene devices supported by different substrates are highly disordered, and the geometry of the substrate imposes severe limitations on the function of graphene devices [1, 2]. The quantum anomalous Hall effect in graphene and its bilayer was first observed in 2013 [3, 4], and research regarding the effect of substrates on graphene devices continues. The carrier mobility of SiO2-supported graphene devices is limited by scattering from charged surface states and impurities
[5–9] and substrate surface roughness [10–12]. For Si, the electronic contributions to friction in silicon p–n junctions have been studied by Park et al. [13, 14], who reported that the bias influenced the friction of the silicon p–n junction by adjusting the state of the electronic surface. Owing to the electrostatic force, the bias voltage results in a significant increase in the friction force at an applied electric field [15]. However, ther
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